Influence of Pulsed 266-nm Laser Radiation on the Optical Properties of CdTe and Cd0.9Zn0.1Te in the Region of the Fundamental Optical Transition
DOI:
https://doi.org/10.15407/ujpe66.3.260Keywords:
CdTe, CdZnTe, transmission, reflection, absorption, laser irradiationAbstract
Optical research of the transmittance and reflectance spectra of p-CdTe(111) single crystals and Cd0.9Zn0.1Te solid solution specimens in a spectral interval of (0.8÷1.7×10−6 m before and after their laser irradiation at the wavelength Λ = 266 nm to energy doses of 17.2–47.01 mJ/cm2 has been carried out. The structural gettering, i.e. the absorption due to the presence of regions in semiconductors with a defect structure that can actively absorb point defects and bind impurities, was found to be the main mechanism of influence of a pulsed laser radiation on the optical properties of thin near-surface layers in the studied crystals.
References
D.V. Korbutyak, S.V. Melnychuk, Ye.V. Korbut, M.M. Borysyuk. Cadmium Telluride: Impurity-Defect States and Detector Properties (Ivan Fedorov, 2000) (in Ukrainian).
V.I. Khivrych, Effects of Compensation and Ionizing Radiation in CdTe Single Crystals (Institute for Nuclear Research of the NAS of Ukraine, 2010) (in Ukrainian).
P.J. Sellin. Recent advances in compound semiconductor radiation detectors. Nucl. Instrum. Methods A 513, 332 (2003).
https://doi.org/10.1016/j.nima.2003.08.058
T.E. Schlesinger, J.E. Toney, H. Yoon, E.Y. Lee, B.A. Brunett, L. Franks, R.B. James. Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater. Sci. Eng. R 32, 103 (2001).
https://doi.org/10.1016/S0927-796X(01)00027-4
A. Owens, A. Peacock. Compound semiconductor radiation detectors. Nucl. Instrum. Methods A 531, 18 (2004).
https://doi.org/10.1016/j.nima.2004.05.071
V.A. Gnatyuk, S.N. Levytskyi, O.I. Vlasenko, T. Aoki. Formation of doped nano-layers in CdTe semiconductor crystals by laser irradiation with nanosecond pulses. Thai J. Nanosci. Nanotechnol. 1, No. 2, 7 (2016).
P.O. Gentsar, O.I. Vlasenko. Electronic Phenomena in the Optical Spectra of Near-Surface Layers and Bulk of the Materials of the IV, AIIIBV, AIIBVI, and AIIIBVI Groups (ART OK, 2017) (in Ukrainian).
V.A. Zuev, V.G. Litovchenko, V.G. Popov. Laser treatment of thin surface layers of semiconductors. Kvant. Elektron. 23, 33 (1982) (in Russian).
V.P. Veiko, M.N. Libenson, G.G. Chervyakov, E.B. Yakovlev. Interaction of Laser Radiation with Matter (Fizmatlit, 2008) (in Russian).
W.W. Duley. Laser Processing and Analysis of Materials (Plenum Press, 1983).
https://doi.org/10.1007/978-1-4757-0193-7
A.M. Evstigneev, P.A. Genzar, S.A. Grusha, R.V. Konakova, A.N. Krasiko, O.V. Snitko, Yu.A. Thorik. Collisional broadening of optical spectra and its relation to mobility. Fiz. Tekhn. Poluprov. 21, 1138 (1987) (in Russian).
F. Bechstedt, R. Enderlein. Semiconductor Surfaces and Interfaces (Akademie, 1988).
Problems of Semiconductor Surface Science. Edited by O.V. Snitko. (Naukova Dumka, 1981) (in Russian).
V.E. Primachenko, O.V. Snitko. Physics of Metal-Doped Semiconductor Surface (Naukova Dumka, 1988) (in Russian).
Downloads
Published
How to Cite
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
