Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers

  • V. P. Veleschuk V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
  • O. I. Vlasenko V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
  • Z. K. Vlasenko V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
  • V. A. Gnatyuk V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
  • S. N. Levytskyi V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Keywords: cadmium telluride, pulsed laser irradiation

Abstract

The dependences of the melting threshold of CdTe under the pulsed laser irradiation on the radiation wavelength л and the laser pulse duration тp are calculated with regard for the non-equilibrium character of charge carriers. Three components of the energy released at the thermalization of excited carriers under the nanosecond laser irradiation of CdTe in the fundamental absorption region are considered: the component that dominates immediately after the excitation, and the components released at the nonradiative bulk and nonradiative surface recombinations. Together, they determine the depth of heat penetration into the crystal and, therefore, its melting threshold. It is shown that the CdTe melting threshold grows from 2.6 to 4.75 MW/cm2, when л changes from 300 to 800 nm at тp = 20 ns. The changes in the non-equilibrium charge carrier parameters (the surface recombination rate, lifetime, and diffusion depth) are found to vary the CdTe melting threshold by at least 30%.

References

D.V. Korbutyak, S.V. Melnychuk, E.V. Korbut, M.M. Borysyuk, Cadmium Telluride: Impurity-Defect States and Detector Properties (Ivan Fedorov, 2000) (in Ukrainian).

V.A. Gnatyuk, T. Aoki, Y. Hatanaka, O.I. Vlasenko. Metal–semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses. Appl. Surf. Sci. 244, 528 (2005).

https://doi.org/10.1016/j.apsusc.2004.10.113

V.A. Gnatyuk, T. Aoki, Y. Nakanishi, Y. Hatanaka. Surface state of CdTe crystals irradiated by KrF excimer laser pulses near the melting threshold. Surf. Sci. 542, 142 (2003).

https://doi.org/10.1016/S0039-6028(03)00987-7

V.A. Gnatyuk, T. Aoki, O.S. Gorodnychenko, Y. Hatanaka. Solid-liquid phase transitions in CdTe crystals under pulsed laser irradiation. Appl. Phys. Lett. 83, 3704 (2003).

https://doi.org/10.1063/1.1625777

L.A. Kosyachenko, T. Aoki, C.P. Lambropoulos, V.A. Gnatyuk, S.V. Melnychuk, V.M. Sklyarchuk, E.V. Grushko, O.L. Maslyanchuk, O.V. Sklyarchuk. Optimal width of barrier region in X/-ray Schottky diode detectors based on CdTe and CdZnTe. J. Appl. Phys. 113, 054504 (2013).

https://doi.org/10.1063/1.4790358

A. Baidullaeva, A.I. Vlasenko, L.F. Kuzan, O.S. Litvin, P.E. Mozol'. Formation of nanoscale structures on the surface of p-CdTe crystals under the action of a single pulse of ruby laser. Fiz. Tekh. Poluprovodn. 39, 1064 (2005) (in Russian).

V.P. Makhnii, I.I. German, E.I. Chernykh. Influence of treatment on the surface parameters of singlecrystalline cadmium telluride substrates. Poverkhn. Rentgen. Sinkhrotron. Neitron. Issled. N 6, 65 (2013) (in Russian).

L.A. Golovan', P.K. Kashkarov, V.M. Lakeenkov et al. Rutherford backscattering study of laser-induced defect formation in CdTe crystals. Fiz. Tverd. Tela 40, 209 (1998) (in Russian).

L.A. Golovan', P.K. Kashkarov, V.Yu. Timoshenko. Laserinduced melting and defect formation in cadmium telluride. Laser Phys. 6, 925 (1996).

A. Baidulaeva, V.P. Veleshchuk, A.I. Vlasenko, B.K. Dauletmuratov, O.V. Lyashenko, P.E. Mozol'. Effect of melting on the acoustic response of CdTe and GaAs compounds under pulsed laser irradiation. Fiz. Tekh. Poluprovodn. 42, 286 (2008) (in Russian).

R.O. Bell, M. Toulemonde, P. Siffert. Calculated temperature distribution during laser annealing in silicon and cadmium telluride. J. Appl. Phys. 19, 313 (1979).

https://doi.org/10.1007/BF00900475

N.G. Blamires, D.H.J. Totterdel. Orientation dependent surface damage observed in laser irradiated cadmium telluride. J. Phys. D 16, 2361 (1983).

https://doi.org/10.1088/0022-3727/16/12/014

I.L. Shul'pina, N.K. Zelenina, O.A. Matveev. Effects of pulsed laser radiation on the real structure of CdTe crystals. Fiz. Tverd. Tela 40, 68 (1998) (in Russian).

I.L. Shul'pina, N.K. Zelenina, O.A. Matveev. Thermal effects of pulsed laser radiation on the real structure of CdTe crystals. Fiz. Tverd. Tela 42, 548 (2000) (in Russian).

I.L. Shul'pina, V.V. Ratnikov, O.A. Matveev. X-ray diffraction study of changes in the real structure of CdTe single crystals after laser irradiation. Fiz. Tverd. Tela 43, 559 (2002) (in Russian).

S.P. Zhvavyi, G.L. Zykov. Numerical simulation of the dynamics of phase transitions in CdTe induced by nanosecond excimer laser radiation. Fiz. Tekh. Poluprovodn. 40, 652 (2006) (in Russian).

A.A. Kovalev, S.P. Zhvavyi, G.L. Zykov. Dynamics of laserinduced phase transitions in cadmium telluride. Fiz. Tekh. Poluprovodn. 39, 1345 (2005) (in Russian).

J.R. Meyer, M.R. Kruer, F.J. Bartoli. Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs. J. Appl. Phys. 51, 5513 (1980).

https://doi.org/10.1063/1.327469

V.V. Apollonov, A.M. Prokhorov, V.Yu. Khomich, S.A. Chetkin. Thermoelastic action of pulse-periodic laser radiation on the surface of a solid. Sov. J. Quant. Electron. 12, 188 (1982).

https://doi.org/10.1070/QE1982v012n02ABEH005473

E.I. Gatskevich, G.D. Ivlev, P. Pˇrikryl, R. Cern’y, V. Ch’ab, O. Cibulka. Pulsed laser-induced phase transformations in CdTe single crystals. Appl. Surf. Sci. 248, 259 (2005).

https://doi.org/10.1016/j.apsusc.2005.03.045

V.M. Glazov, L.M. Pavlova. Temperature dependences of the density and the character of interaction between particles in molten zinc and cadmium tellurides. Zh. Fiz. Khim. 75, 1735 (2001) (in Russian).

O. Madelung. Semiconductors: Data Handbook (Springer, 2004).

https://doi.org/10.1007/978-3-642-18865-7

R. Triboulet, P. Siffert. CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-Structures, Crystal Growth, Surfaces and Applications (Elsevier, 2010).

V.I. Gavrilenko, A.M. Grekhov, D.V. Korbutyak, V.G. Litovchenko. Optical Properties of Semiconductors (Naukova Dumka, 1987) (in Russian).

O.V. Galochkin, V.M. Zhyharevych, G.I. Rarenko, V.M. Strebezhev, Ya.D. Zakharuk, S.G. Dremlyuzhenko. Influence of powerful millisecond laser radiation on the depth of melted layer in CdTe and Cd0.8Mn0.2Te crystals. Fiz. Khim. Tverd. Tila 13, 224 (2012) (in Ukrainian).

Published
2018-12-23
How to Cite
Veleschuk, V., Vlasenko, O., Vlasenko, Z., Gnatyuk, V., & Levytskyi, S. (2018). Dependence of the CdTe Melting Threshold on the Pulse Duration and Wavelength of Laser Radiation and the Parameters of Non-Equilibrium Charge Carriers. Ukrainian Journal of Physics, 62(2), 159. https://doi.org/10.15407/ujpe62.02.0159
Section
Solid matter