Materials for Optical Sensors of X-ray Irradiation Based on (GaxIn1 – x)2Se3 Films
DOI:
https://doi.org/10.15407/ujpe67.9.684Keywords:
film, spectral ellipsometry, transmission spectra, X-ray irradiation, energy pseudogap, refractive indexAbstract
(GaxIn1-x)2Se3 films with 0.1 ≤ x ≤ 0.4 were deposited by the thermal evaporation technique. As-deposited (GaxIn1-x)2Se3 films were irradiated using the wideband radiation of a Cu-anode X-ray tube at different exposure times. The spectral dependences of the refractive index and extinction coefficient are measured by the spectral ellipsometry technique. The optical transmission spectra of X-ray irradiated (GaxIn1-x)2Se3 films are studied for various irradiation times. Parameters of the Urbach absorption edge for X-ray-irradiated (GaxIn1-x)2Se3 thin films are determined and compared with those of non-irradiated films. The spectral dependences of the refractive indices of non-irradiated and X-ray-irradiated (GaxIn1-x)2Se3 films are described in the framework of the model developed by Cauchy, Sellmeier, Wemple, and DiDomenico, as well as by the optical-refractometric relation. The detailed variation of the parameters of the Wemple–DiDomenico model for non-irradiated and X-ray-irradiated (GaxIn1-x)2Se3 films has been analyzed. The perspective of applications of (GaxIn1-x)2Se3 films as the materials for optical sensors of X-rays is discussed.
References
S. Popovi'c, B. Celustka, ЕЅ. Ruˇzi'c-Toroˇs, D. Broz. X-ray ˇ diffraction study and semiconducting properties of the system Ga2Se3-In2Se3. Phys. Stat. Sol. (a) 41, 255 (1977).
https://doi.org/10.1002/pssa.2210410131
A. Tonejc, S. Popovic, B. Grzeta-Plenkovic. Phases, lattice parameters and thermal expansion of (GaxIn1−x)2Se3, 1 ≥ x ≥ 0, between room temperature and melting point. J. Appl. Cryst. 13, 24 (1980).
https://doi.org/10.1107/S0021889880011454
J. Ye, T. Yoshida, Y. Nakamura, O. Nittono. Realization of giant optical rotatory power for red and infrared light using III2VI3 compound semiconductor (GaxIn1−x)2Se3. Jap. J. Appl. Phys. 35, 4395 (1996).
https://doi.org/10.1143/JJAP.35.4395
M. Kranjˇcec, B. Celustka, B. Etlinger, D. Desnica. The indirect allowed optical transition in (Ga0.3In0.7)2Se3. Phys. Stat. Sol. (a) 109, 329 (1988).
https://doi.org/10.1002/pssa.2211090136
M.Kranjˇcec, D.I. Desnica, B.Celustka, Gy.Sh. Kovacs, ˇ I.P. Studenyak. Fundamental optical absorption edge and compositional disorder in y1-(GaxIn1−x)2Se3 single crystals. Phys. Stat. Sol. (a) 144, 223 (1994).
https://doi.org/10.1002/pssa.2211440125
M. Kranjˇcec, I.P. Studenyak, Yu.M. Azhniuk. Photoluminescence and optical absorption edge in y1-(GaxIn1−x)2Se3 mixed crystals. Phys. Stat. Sol. (b) 238, 439 (2005).
https://doi.org/10.1002/pssb.200540073
J. Ye, T. Yoshida, Y. Nakamura, O. Nittono. Optical activity in the vacancy ordered III2VI3 compound semiconductor (Ga0.3In0.7)2Se3. Appl. Phys. Lett. 67, 3066 (1995).
https://doi.org/10.1063/1.114866
M. Kranjˇcec, I.D. Desnica, B. Celustka, A.N. Borec, ˇ Gy.Sh. Kovacs, Z.P. Hadmashy, L.M. Suslikov, I.P. Studenyak. On some crystal-optic properties of y1-(GaxIn1−x)2Se3 single crystals. Phys. Stat. Sol. (a) 153, 539 (1996).
https://doi.org/10.1002/pssa.2211530229
M. Kranjˇcec, I.P. Studenyak, L.M. Suslikov, Gy.Sh. Kovacs, E. Cerovec. Birefringence in y1-(GaxIn1−x)2Se3 single crystals. Opt. Mat. 25, 307 (2004).
https://doi.org/10.1016/j.optmat.2003.08.005
M. Kranjˇcec, I.D. Desnica, I.P. Studenyak, B. Celustka, ˇ A.N. Borec, I.M. Yurkin, Gy.Sh. Kovacs. Acousto-optic modulator with a (Ga0.4In0.6)2Se3 monocrystal as the active element. Applied Optics 36, 490 (1997).
https://doi.org/10.1364/AO.36.000490
I.P. Studenyak, M. Kranjˇcec, V.Yu. Izai, V.I. Studenyak, M.M. Pop, L.M. Suslikov. Ellipsometric and spectrometric studies of (Ga0.2In0.8)2Se3 thin film. Ukr. Fiz. Zhurn. 65, 231 (2020).
https://doi.org/10.15407/ujpe65.3.231
I.P. Studenyak, M. Kranjˇcec, V.I. Studenyak, V.Yu. Izai, R. Romaniuk, P. Kisala, G. Yusupova, A. Aizhanova. Optical absorption studies of (Ga0.1In0.9)2Se3 thin film. Proc. SPIE 11581, 1158116 (2020).
https://doi.org/10.1117/12.2580582
I.P. Studenyak, M.M. Kranjˇcec, M.M. Pop, V.I. Studenyak, L.M. Suslikov, O.Yu. Pinaeva, P. Komada, S. Luganskaya, M. Kozhamberdiyeva, A. Mussabekova. Optical parameters of (Ga0.4In0.6)2Se3 thin film. Proc. SPIE 11456, 1145605 (2020).
https://doi.org/10.1117/12.2569782
H. Liang, S. Cui, R. Su, P. Guan, Y. He, L. Yang, L. Chen, Y. Zhang, Z. Mei, X. Du. Flexible X-ray detectors based on amorphous Ga2O3 thin films. ACS Photonics 6, 351 (2019).
https://doi.org/10.1021/acsphotonics.8b00769
A.A. Hendi. Determination and analysis the influence of X-ray irradiation on optical constant of magnesium phthalocyanin. Austral. J. Basic and Appl. Sci. 5, 38 (2011).
M.M. El-Nahass, A.H. Ammar, A.A. Atta, A.A.M. Farag, E.F.M. El-Zaidia. Influence of X-ray irradiation on the optical properties of CoMTPP thin films. Optics Communications 284, 2259 (2011).
https://doi.org/10.1016/j.optcom.2010.12.032
A.A. Khodiri, A.M. Nawar, K.M. Abd El-kader. Effect of X-ray irradiation on structural and optical properties of topological insulator bismuth telluride nano-structure thin film. IOSR J. Appl. Phys. 8, 60 (2016).
https://doi.org/10.9790/4861-0804046068
Y. Jung, O.G¨unes., G. Belev, C. Cyril Koughia, R. Johanson, S. Kasap. X-ray induced effects in the optical and thermal properties of a-Se1−xAsx (x = 0, 0.005, 0.06) doped with 0-220 ppm Cs. J. Mater. Sci.: Materials in Electronics 28, 7139 (2017).
https://doi.org/10.1007/s10854-017-6550-1
I.P. Studenyak, M.M. Kutsyk, A.V. Bendak, V.Yu. Izai, P. K'uˇs, M. Mikula. Influence of X-ray irradiation on optical absorption edge and refractive index dispersion in Cu6PS5I-based thin film deposited by magnetron sputtering. Semicond. Phys., Quantum Electron. & Optoelectron. 20, 246 (2017).
https://doi.org/10.15407/spqeo20.02.246
I.P. Studenyak, A.V. Bendak, V.Y. Izai, V.I. Studenyak, A.M. Solomon, P. K'uˇs. Optical absorption and refractive index of X-ray irradiated Cu6PSe5I-based thin film. In: Microstructure and Properties of Micro- and Nanoscale Materials, Films, and Coatings (NAP 2019). Edited by A. Pogrebnjak, O. Bondar. Springer Proceedings in Physics 240, 31 (2020).
https://doi.org/10.1007/978-981-15-1742-6_4
I.P. Studenyak, M.M. Pop, M. Kranjˇcec, A.M. Solomon. Optical studies of X-ray irradiated (Ga0.4In0.6)2Se3 films. Ukr. J. Phys. Opt. 21, 184 (2020).
https://doi.org/10.3116/16091833/21/4/184/2020
R.M.A. Azzam, N.M. Bashara. Ellipsometry and Polarized Light (North-Holland Publishing Company, 1977).
O.S. Heavens. Optical Properties of Thin Solid Films (Dover Publications, 1991).
D. Poelman, P.F. Smet. Methods for the determination of the optical constants of thin films from single transmission measurements: a critical review. J. Phys. D: Appl. Phys. 36, 1850 (2003).
https://doi.org/10.1088/0022-3727/36/15/316
S.H. Wemple, M. Di Domenico. Behaviour of the dielectric constant in covalent and ionic materials. Phys. Rev. B 3, 1338 (1971).
https://doi.org/10.1103/PhysRevB.3.1338
K. Tanaka. Optical properties and photoinduced changes in amorphous As-S films. Thin Solid Films 66, 271 (1980).
https://doi.org/10.1016/0040-6090(80)90381-8
M.S. Tubbs. A spectroscopic interpretation of crystalline ionicity. Phys. Stat. Sol. (b) 41, K61 (1970).
https://doi.org/10.1002/pssb.19700410164
M. Kranjˇcec, I.P. Studenyak, O.T. Nahusko. Spectrometric and ellipsometric studies of (1-x)TiO2xLn2O3 (Ln = Nd, Sm, Gd, Er, Yb) thin films. Non-Cryst. Solids 353, 31 (2007).
https://doi.org/10.1016/j.jnoncrysol.2006.09.018
T.S. Moss. Relation between the refractive index and energy gap of semiconductors. Physica Status Solidi B 131, 415 (1985).
https://doi.org/10.1002/pssb.2221310202
N.M. Ravindra, V.K. Srivastava. Variation of refractive index with energy gap in semiconductors. Infrared Phys. 19, 603 (1979).
https://doi.org/10.1016/0020-0891(79)90081-2
I.P. Studenyak, M. Kranjˇcec, V.I. Studenyak, V.Yu. Izai, R. Romaniuk, P. Kisala, G. Yusupova, A. Aizhanova. Optical absorption studies of (Ga0.1In0.9)2Se3 thin film. Proc. SPIE 11581, Photonics Applications in Astronomy, Communications, Industry, and High Energy Physics Experiments (2020), p. 1158116.
https://doi.org/10.1117/12.2580582
I.P. Studenyak, M. Kranjˇcec, V.Yu. Izai, V.I. Studenyak, M.M. Pop, L.M. Suslikov. Ellipsometric and spectrometric studies of (Ga0.2In0.8)2Se3 thin film. Ukr. Fiz. Zhurn. 65, 231 (2020).
https://doi.org/10.15407/ujpe65.3.231
I.P. Studenyak, M.M. Kranjˇcec, M.M. Pop, V.I. Studenyak, L.M. Suslikov, O.Yu. Pinaeva, P. Komada, S. Luganskaya, M. Kozhamberdiyeva, A. Mussabekova. Optical parameters of (Ga0.4In0.6)2Se3 thin film. Proc. SPIE 11456, 1145605 (2020).
https://doi.org/10.1117/12.2569782
H. Sumi, A. Sumi. The Urbach-Martienssen rule revisited. J. Phys. Soc. Japan 56, 2211 (1987).
https://doi.org/10.1143/JPSJ.56.2211
H. Sumi, Y. Toyozawa. Urbach-Martienseen rule and exciton trapped momentarily by lattice vibrations. J. Phys. Soc. Japan 31, 342 (1971).
https://doi.org/10.1143/JPSJ.31.342
J.D. Dow, D. Redfield. Toward a unified theory of Urbach's rule and exponential absorption edges. Phys. Rev. B 5, 594 (1972).
https://doi.org/10.1103/PhysRevB.5.594
L. Samuel, Y. Brada, A. Burger, M. Roth. Urbach rule in mixed single crystals of ZnxCd1−xSe. Phys. Rev. B 36, 1168 (1987).
https://doi.org/10.1103/PhysRevB.36.1168
G.D. Cody, T. Tiedje, B. Abeles, B. Brooks, Y. Goldstein. Disorder and the optical-absorption edge of hydrogenated amorphous silicon. Phys. Rev. Lett. 47, 1480 (1981).
Downloads
Published
How to Cite
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
