Anisotropy of Conductivity in Bilayer Graphene with Relatively Shifted Layers

  • V. G. Litovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • A. I. Kurchak V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • M. V. Strikha V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Keywords: bilayer graphene, anisotropy of conductivity, valley current

Abstract

A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to remain a zero-gap material in the whole range of experimentally attainable shifts, but the positions of contact points between the conduction and valence bands depend substantially on the shift direction. The shift results in a considerable anisotropy of the band spectrum, which is, in turn, responsible for a substantial (10–20%) anisotropy of the conductivity in BLG. A possibility of using this anisotropy in high-sensitive sensors of a mechanical tension and for the generation of a purely valley current in multivalley anisotropic BLG in the case where both the average spin and the average current of electrons are equal to zero is discussed.

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Published
2018-10-18
How to Cite
Litovchenko, V., Kurchak, A., & Strikha, M. (2018). Anisotropy of Conductivity in Bilayer Graphene with Relatively Shifted Layers. Ukrainian Journal of Physics, 59(1), 79. https://doi.org/10.15407/ujpe59.01.0079
Section
Nanosystems

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