Surface Photovoltage Spectroscopy Research of Solar Silicon Recombination Parameters


  • V. G. Litovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine



surface photovoltage spectroscopy, solar silicon, near-surface charge region


Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etched (real) surface, structures with the implanted recombination-active Fe+ impurity, SiO2–Si structures with the surface-induced inversion channel, and structures with the diffused p–n junction. A comparison with the formulas obtained for the spectra of direct, VSC, and inverse, 1/VSC, photovoltages in terms of the absorption coefficient k and its reciprocal quantity 1/k is carried out. The surface and bulk recombination rates and the distributions of recombination-active impurities, structural technological impurities, and defects in the near-surface charge region of solar silicon are calculated.



How to Cite

Litovchenko, V. G. (2019). Surface Photovoltage Spectroscopy Research of Solar Silicon Recombination Parameters. Ukrainian Journal of Physics, 60(10), 1036.



Solid matter

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