Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer
Keywords:surface photovoltage, surface recombination, silicon
Spectral dependences of the small-signal surface photovoltage, Vf (л), with a region of short- wave recession have been studied experimentally and theoretically. The dependences Vf (л) are shown to enable important information concerning a modification of surface and bulk recombination properties of the photosensitive silicon material in the short-wave spectral range to be obtained experimentally with the use of a nondestructive technique. In particular, the
formation of a damaged near-surface layer owing to the Fe implantation is found to bring about a significant decrease in the diffusion length (i.e. the lifetime) in the implanted layer and an increase of the effective surface recombination rate on the illuminated surface.
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