Surface Photovoltage Spectroscopy Research of Solar Silicon Recombination Parameters

Authors

  • V. G. Litovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe60.10.1036

Keywords:

surface photovoltage spectroscopy, solar silicon, near-surface charge region

Abstract

Fundamental recombination parameters of a photosensitive solar silicon material have been studied using the surface photovoltage spectroscopy. The method proposed is analyzed on the basis of photosensitive silicon structures of four types: industrial photosensitive Si wafers with the chemically etched (real) surface, structures with the implanted recombination-active Fe+ impurity, SiO2–Si structures with the surface-induced inversion channel, and structures with the diffused p–n junction. A comparison with the formulas obtained for the spectra of direct, VSC, and inverse, 1/VSC, photovoltages in terms of the absorption coefficient k and its reciprocal quantity 1/k is carried out. The surface and bulk recombination rates and the distributions of recombination-active impurities, structural technological impurities, and defects in the near-surface charge region of solar silicon are calculated.

Published

2019-01-10

How to Cite

Litovchenko, V. G. (2019). Surface Photovoltage Spectroscopy Research of Solar Silicon Recombination Parameters. Ukrainian Journal of Physics, 60(10), 1036. https://doi.org/10.15407/ujpe60.10.1036

Issue

Section

Solid matter