On Some Important Results in Semiconductor Surface Science Obtained in Ukraine During The Independence Years (1991–2016)

Authors

  • V. G. Litovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

Keywords:

-

Abstract

Some important results obtained by Ukrainian physicists in semiconductor surface science during the independence years (1991–2016) are discussed. The review is mainly focused on the results obtained for nano-dimensional and quantum-size structures and classifies them according to the main scientific directions in modern Ukrainian semiconductor surface science.

References

V. Litovchenko, A. Evtukh. Vacuum nanoelectronic. In Handbook of Semiconductor Nanostructures and Nanodevices, edited by A.A. Balandin, K.L. Wang (American Scientific Publishers, 2006).

V. Litovchenko, A. Grygoriev, A. Evtukh, O. Yilmazoglu, H.L. Hartnagel, D. Pavlidis. Electron field emission from wide bandgap semiconductors under intervalley carrier redistribution. J. Appl. Phys. 106, 104511 (2009) [DOI: 10.1063/1.3259384].

A. Evtukh, A. Grygoriev, V. Litovchenko, O. Steblova, O. Yilmazoglu, H.L. Hartnagel, H. Mimura. Influence of the emitted electron energy distribution from nanocathodes upon the current–voltage characteristic. J. Vac. Sci. Technol. B 32, 02B104 (2014) [DOI: 10.1116/ 1.4843715].

V.G. Litovchenko, D.V. Korbutyak, Yu.V. Kryuchenko et al. Polarization phenomena in 2D structures with quantum wells. Phys. Low-Dim. Struct. No. 10/11, 187 (1995).

D.V. Korbutyak, S.G. Krylyuk, V.G. Litovchenko et al. Analysis of photoluminescence spectra peculiarities of short-period GaAs/AlAs superlattices. Phys. Low-Dim. Struct. No. 11/12, 97 (1996).

V.G. Litovchenko, D.V. Korbutyak, S.G. Krylyuk et al. Enhancement of electron-phonon interaction in ultrashort-period GaAs/AlAs superlattices. Phys. Rev. B 55, No. 16, 10621 (1997) [DOI: 10.1103/PhysRevB.55.10621].

Д.В. Корбутяк, С.Г. Крилюк, В.Г. Литовченко та iн. Кiнетика фотолюмiнесценцiї квантових надґраток I та II типiв. УФЖ 43, №1, 124 (1998).

А.П. Оксанич, В.А. Тербан, С.О. Волохов, М.I. Клюй, В.А. Скришевський, В.П. Костильов, А.В. Макаров. Сучаснi технологiї виробництва кремнiю та кремнiєвих фотоелектричних перетворювачiв сонячної енергiї (Мiнерал, 2010) [ISBN 978-966-7830-IS-0].

A.P.Gorban’, V.P.Kostylyov, V.N.Borschev, A.M. Listratenko. Prospects for development of silicon photoconverters and batteries for space use. Telecommunications and Radio Engineering 55, 94 (2001) [DOI: 10.1615/TelecomRadEng.v55.i9.120].

V.A. Semenovich, N.I. Klyui, V.P. Kostylyov, V.G. Litovchenko, V.V. Chernenko. Compositional modulated DLC films for improvement of solar cells efficiency and radiation stability. J. Chem. Vapor Deposition 5, No. 3, 213 (1997).

A.V. Sachenko, A.P. Gorban, V.P. Kostylyov, A.A. Serba, I.O Sokolovskyi. Comparative analysis of photoconversion efficiency in the Si solar cells under concentrated illumination for the standard and rear geometries of arrangement of contacts. Semiconductors 41, No. 10, 1214 (2007) [DOI: 10.1134/S106378260710017X].

A.V. Sachenko, Yu.V. Kryuchenko, V.P. Kostylyov, A.V. Bobyl, E.I. Terukov, S.N. Abolmasov, A.S. Abramov, D.A. Andronikov, M.Z. Shvarts, I.O. Sokolovskyi, M. Evstigneev. Temperature dependence of photoconversion efficiency in silicon heterojunction solar cells: Theory vs experiment. J. Appl. Phys. 119, 225702 (2016) [DOI: 10.1063/1.4953384].

A.V. Sachenko, A.I. Shkrebtii, R.M. Korkishko, V.P. Kostylyov, M.R. Kulish, I.O. Sokolovskyi, M. Evstigneev. Analysis of the attainable efficiency of a direct-bandgap betavoltaic element. J. Phys. D: Appl. Phys. 48, No. 45, 455101 (2015) [DOI: 10.1088/0022-3727/48/45/455101].

В.Г. Литовченко, В.П. Мельник, Б.М. Романюк, Б.Ф. Двернiков, P.М. Коркiшко, В.П. Костильов, С.М. Мусаєв, В.Г. Попов, В.В. Черненко. Мобильные солнечные электростанции для использования в полевых условиях. Вiсник НАН України № 11, 59 (2015).

Р.М. Коркiшко, Б.Н. Романюк, В.П. Мельник, В.П. Костильов. Мобiльний пристрiй для живлення i зарядки малопотужної апаратури в польових умовах. Патент України №105847 на корисну модель. Зареєстровано 11.04.2016 р.

V.G. Litovchenko, T.I. Gorbanyuk, V.S. Solntsev, A.A. Evtukh. Mechanism of hydrogen, oxygen and humidity sensing by Cu/Pd-porous silicon–silicon structures. Appl. Surface Science 234, 262 (2004) [DOI: 10.1016/j.apsusc.2004.05.146].

V.G. Litovchenko, T.I. Gorbanyuk, V.S. Solntsev. New Adsorption Active Nanoclusters for Ecological Monitoring. In Nanodevices and Nanomaterials for Ecological Security – NATO for Peace and Security. Series B: Physics and Biophysics (Springer, 2012), pp. 297–306.

I.P. Lisovskyi, V.G. Litovchenko, I.Z. Indutnyi, D.O. Mazunov, P.E. Shepelyavyi. Infrared study of thermally induced phase separation in SiOx films. Ukr. J. Phys. 50, No. 3. 249 (2005).

A.M. Nyamsi Hendji, N. Jaffrezic-Renault, C. Martelet, P. Clechet, A.A. Shlu’ga, V.I. Strikha, L.I. Netchiporuk, A.P. Soldatkin, W.B. Wlodarski. Sensitive detection of pesticides using a differential ISFET-based system with immobilized cholinesterases. Analytica Chimica Acta 281, 3 (1993) [DOI: 10.1016/0003-2670(93)85333-F].

V.A. Vikulov, V.I. Strikha, V.A. Skryshevsky, S.S. Kilchitskaya, E. Souteyrand, J.-R. Martin. Electrical features of the metal-thin porous silicon-silicon structure. J. Phys. D: Appl. Phys. 33, 1957 (2000) [DOI: 10.1088/0022-3727/33/16/304].

A.I. Manilov, V.A. Skryshevsky. Hydrogen in porous silicon – A review. Mater. Sci. Eng. B 178, 942 (2013) [DOI: 10.1016/j.mseb.2013.05.001].

O.L. Syshchyk, V.A. Skryshevsky, O.O. Soldatkin, A.P. Soldatkin. Enzyme biosensor systems based on porous silicon photoluminescence for detection of glucose, urea and heavy metals. Biosensors and Bioelectronics 66, 89 (2015) [DOI: 10.1016/j.bios.2014.10.075].

V.A. Skryshevsky, O.V. Tretiak, V.A. Vikulov, V.M. Zinchuk, F. Koch, Th. Dittrich. Electrical characterization of gas sensing devices based on porous TiO2. Phys. Stat. Sol. A 197, 534 (2003) [DOI: 10.1002/pssa.200306559].

V.A. Skryshevsky, Yu. S. Milovanov, I.V. Gavrilchenko, S.I. Tiagulskyi, A.V. Rusavsky, V.S. Lysenko, A.N. Nazarov. Impedance spectroscopy of single graphene layer at gas adsorption. Phys. Stat. Sol. A 212, 1941 (2015) [DOI: 10.1002/pssa.201532101].

S. Litvinenko, D. Bielobrov, V. Lysenko, T. Nychyporuk, V. Skryshevsky. Might Silicon Surface Be Used for Electronic Tongue Application? ACS Applied Materials & Interfaces 6, 18440 (2014) [DOI: 10.1021/am5058162].

V.A. Skryshevsky, A. Laugier, V.I. Strikha, V.A. Vikulov. Evaluation of quantum efficiency of porous silicon photoluminescence. Mat. Sci. Eng. B 40, 54 (1996) [DOI: 10.1016/0921-5107(96)01572-3].

O. Nichiporuk, A. Kaminski, M. Lemiti, A. Fave, S. Litvinenko, V. Skryshevsky. Passivation of the surface of rear contact solar cells by porous silicon. Thin Solid Films 512, 248 (2006) [DOI: 10.1016/j.tsf.2005.12.053].

I.I. Ivanov, V.A. Skryshevsky, T. Nychyporuk, M. Lemiti, A.V. Makarov, N.I. Klyui, O.V. Tretyak. Porous silicon Bragg mirrors on single- and multi-crystalline silicon for solar cells. Renewable Energy 55, 79 (2013) [DOI: 10.1016/j.renene.2012.12.031].

Патент: Способ исследования структуры поверхности некристаллических твердых тел. А.С. №3917426 (1987).

O. Bondarchuck, S. Goysa, I. Koval, P. Mel’nik, M. Nakhodkin. Short-range order of disordered solid surfaces from elastically scattered electron spectra. Surf. Rev. Lett. 04, 965 (1997) [DOI: 10.1142/S0218625X97001139].

O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin. On the short-range order of the SiOx (0 ≤ x ≤ 2) surface. Appl. Surf. Science 255, No. 12, 6421 (2009) [DOI: 10.1016/j.apsusc.2009.02.031].

Ионизационная спектроскопия, пiд ред. М.Г. Находкiна (Либiдь, 1992).

http://www.is.univ.kiev.ua/Software/nSpView.html

S.Yu. Bulavenko, I.F. Koval, P.V. Melnik, N.G. Nakhodkin, H.J.W. Zandvliet. STM investigation of the initial adsorption stage of Bi on Si(1 0 0)-(2×1) and Ge(1 0 0)-(2×1) surfaces. Surf. Sci. 482–485, 370 (2001) [DOI: 10.1016/S0039-6028(01)00804-4].

A. Goryachko, P.V. Melnik, N.G. Nakhodkin, T.V. Afanasjeva, I.F. Koval. New features of the Si(1 0 0)-c(4×4) reconstruction observed with STM: suggestion of the structure with lowered symmetry. Surf. Sci. 497, No. 1, 47 (2002) [DOI: 10.1016/S0039-6028(01)01623-5].

S.Yu. Bulavenko, I.F. Koval, P.V. Melnik, N.G. Nakhodkin. The concerted movements of weakly bonded Bi dimers on the Si(1 0 0)2×1 surface. Surf. Sci. 507–510, 119 (2002) [DOI: 10.1016/S0039-6028(02)01186-X].

S.Yu. Bulavenko, P.V. Meknik, M.G. Nakhodkin. Scanning tunneling microscopy images of the atoms in the corner holes on the Si(1 1 1)-(7×7) surface with bismuth-covered tips. Surf. Sci. 469, 127 (2000) [DOI: 10.1016/S0039-6028(00)00798-6].

S.Yu. Bulavenko, P.V. Meknik, M.G. Nakhodkin, A. Goriachko. Investigation of hydrogen interaction with the Si(1 1 1)-(7×7) surface by STM with Bi/W tips. Surf. Sci. 600, 1185 (2006) [DOI: 10.1016/j.susc.2006.01.021].

I.F. Koval, P.V. Melnik, N.G. Nakhodkin, M.Yu. Pyatnitsky, T.V. Afanasieva. Interaction of O2 with the BiSi(001) system: from passivation to promoted oxidation. Surf. Sci. 384, L844 (1997) [DOI: 10.1016/S0039-6028(97)00285-9].

T.V. Afanasieva, S.Yu. Bulavenko, I.F. Koval, H.J.W. Zandvliet. Diffusion of Si and Ge dimers on Ge(001) surfaces. J. Appl. Phys. 93, No. 3, 1452 (2003) [DOI: 10.1063/1.1533107].

I.P. Koval, Y.A. Len, M.G. Nakhodkin, M.O. Svishevs’kyi, M.Y. Yakovenko. Interaction of molecular oxygen with Si(001) surface covered with a chromium or titanium monolayer. Ukr. J. Phys. 60, No. 1, 46 (2015) [DOI: 10.15407/ujpe60.01.0046].

М.Г. Находкiн, М.I. Федорченко, Адсорбцiя атомiв Bi на поверхнi Ge(111)-c(2×8). Вiсник Київського унiверситету. Cерiя: фiз.-мат. науки. Вип. 4. 236 (2010).

M.Yu. Pyatnitskii, I.F. Koval’, P.V. Mel’nik, N.G. Nakhodkin, T.V. Afanas’eva. Effects of adsorbed bismuth on Si(001) surface electronic states. Theor. Exp. Chem. 32, No. 3, 148 (1996) [DOI: 10.1007/BF01373240].

T.V. Afanasieva. Adsorption and dynamics of group IV, V atoms and molecular oxygen on semiconductor group IV (0 0 1) surfaces. J. Phys. Cond. Matt. 28, No. 31, 313001 (2016) [DOI: 10.1088/0953-8984/28/31/313001].

N.G. Nakhodkin, T.V. Rodionova. The mechanism of secondary grain growth in polysilicon films. J. Cryst. Growth 171, No. 1–2. 50 (1997) [DOI: 10.1016/S0022-0248(96)00476-9].

N.G. Nakhodkin, N.P. Kulish, T.V. Rodionova. Faceting of twin tips in polysilicon films. J. Cryst. Growth 381, 65 (2013) [DOI: 10.1016/j.jcrysgro.2013.06.029].

N.G. Nakhodkin, N.P. Kulish, P.M. Lytvyn, T.V. Rodionova. Features of special joints of grain boundaries in polysilicon films of equiaxial and dendritic structures. Functional Materials 13, No. 2, 305 (2006).

M.G. Nakhodkin, M.I. Fedorchenko. Interaction of oxygen and gadolinium with Si(100)-2×1 surface. Formation of a system with 1-eV work function. Ukr. J. Phys. 60, No. 2, 97 (2015) [DOI: 10.15407/ujpe60.02.0097].

Фiзичний факультет Одеського нацiонального унiверситету iм. I.I. Мечникова. 1865–2000: Збiрник статей. Вiдп. ред. Г.Г. Чемересюк (Астропринт, 2001).

В.А. Смынтына. Электронно-молекулярные явления на поверхности полупроводников: пленки селенида и сульфида кадмия (Астропринт, 2008).

В.А. Смынтына. Электронно-молекулярные явления на поверхности полупроводников. Полупроводниковые газовые сенсоры (Астропринт, 2009).

И.Р. Яцунский, О.А. Кулинич, В.А. Смынтына. Влияние окисления на дефектообразование в легированном кремнии (Lambert, 2011) [ISBN: 978-3-8465-4157-9].

В.А. Смынтына, В.А. Борщак, Е.В. Бритавский, А.А. Карпенко. Неидеальные гетеропереходы для сенсоров изображения (Одесский национальный университет имени И.И. Мечникова, 2014).

Неравновесные процессы в сенсорных наноструктурах: монография. Под ред. В.А. Смынтыны (Одесский национальный университет имени И.И. Мечникова, 2015).

V. Smyntyna. Electron and Molecular Phenomena on the Surface of Semiconductors (Nova Publishers, 2013).

V. Smyntyna. Semiconductor Materials for Gas Sensors (Nova Publishers, 2013).

V. Smyntyna, A. Tereshchenko. Metal oxide based biosensors for the detection of dangerous biological compounds? In Nanomaterials for Security (NATO Science for Peace and Security Series A: Chemistry and Biology), Janez Bonсa, Sergei Kruchinin (Editors) (Springer, 2016), pp.281–288 [DOI: 10.1007/978-94-017-7593-9_22].

В.А. Сминтина. Фiзико-хiмiчнi явища на поверхнi твердих тiл (Астропринт, 2009).

В.А. Сминтина. Курс загальної фiзики (Астропринт, 2012).

В.А. Сминтина. Поверхневi явища в напiвпровiдниках (Одеський нацiональний унiверситет iменi I.I. Мечникова, 2016).

R. Viter, I. Baleviciute, A. Abou Chaaya, L. Mikoliunaite, Z. Balevicius, A. Ramanavicius, A. Zalesska, V. Vataman, V. Smyntyna, Z. Gertnere, D. Erts, P. Miele, M. Bechelany. Optical properties of ultrathin Al2O3/ZnO nanolaminates. Thin Solid Films 594, 96 (2015) [DOI: 10.1016/j.tsf.2015.10.018].

V. Smyntyna, I. Iatsunskyi, Thin Solid Films, 594, August 2015 [DOI: 10.1016/j.tsf.2015.05.056].

R. Viter, Z. Balevicius, A. Abou Chaaya, I. Baleviciute, S. Tumenas, L. Mikoliunaite, A. Ramanavicius, Z. Gertnere, A. Zalesska, V. Vataman, V. Smyntyna, D. Erts, P. Miele, M. Bechelany. The influence of localized plasmons on the optical properties of Au/ZnO nanostructures. J. Mater. Chem. C 3, 6815 (2015) [DOI: 10.1039/c5tc00964b].

I. Iatsunskyi, M. Pavlenko, R. Viter, M. Jancelewicz, G. Nowaczyk, I. Baleviciute, K. Zaleski, S. Jurga, A. Ramanavicius, V. Smyntyna. Tailoring the structural, optical, and photoluminescence properties of porous silicon/TiO2 nanostructures. J. Phys. Chem. C 119 (13), 7164 (2015) [DOI: 10.1021/acs.jpcc.5b01670].

I. Iatsunskyi, M. Kempinski, M. Jancelewicz, K. Zaleski, S. Jurga, V. Smyntyna. Structural and XPS characterization of ALD Al2O3 coated porous silicon. Vacuum 113, 52 (2015) [DOI: 10.1016/j.vacuum.2014.12.015].

R. Viter, A. Abou Chaaya, I. Iatsunskyi, G. Nowaczyk, K. Kovalevskis, D. Erts, P. Miele, V. Smyntyna, M. Bechelany. Tuning of ZnO 1D nanostructures by atomic layer deposition and electrospinning for optical gas sensor applications. Nanotechnology 26 (10), 105501 (2015) [DOI: 10.1088/0957-4484/26/10/105501].

V. Smyntyna. The chemisorption forms and the centre nature of oxigen chemisorption on the CdSe thin-film surfaces. Nuovo Cimento 63B, No. 2, 642 (1981).

Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyaskaya. Uncooled р(Pb1−xSnxSe)–n(CdSe) hetero-structure-based spectral range. Semiconductor Physics, Quantum Electronics and Optoelectronics 17, No. 4, 408 (2014).

Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyaskaya. Stripline-type photodetector based on the narrow-gap ternary compound Hg1−xCdxTe for the far IR region. J. Eng. Phys. Thermophys. 86, No. 1, 242 (2013) [DOI: 10.1007/s10891-013-0825-z].

Published

2019-12-09

How to Cite

Litovchenko, V. G. (2019). On Some Important Results in Semiconductor Surface Science Obtained in Ukraine During The Independence Years (1991–2016). Ukrainian Journal of Physics, 11(1), 18. Retrieved from https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019657

Issue

Section

Reviews

Most read articles by the same author(s)

1 2 > >>