Особливості протікання струму в гетероструктурах оксид титану–кремній

Yu.S. Milovanov; I.V. Gavrilchenko; V.Ya. Gayvoronsky; G.V. Kuznetsov; V.A. Skryshevsky

doi:10.15407/ujpe57.5.545

Peculiarities of Current Transport in Titanium Oxide-Silicon Heterostructures

Authors

Yu.S. Milovanov Taras Shevchenko National University of Kyiv, Institute of High Technologies of Kyiv
I.V. Gavrilchenko Taras Shevchenko National University of Kyiv, Institute of High Technologies of Kyiv
V.Ya. Gayvoronsky Taras Shevchenko National University of Kyiv, Institute of High Technologies of Kyiv
G.V. Kuznetsov Taras Shevchenko National University of Kyiv, Institute of High Technologies of Kyiv
V.A. Skryshevsky Taras Shevchenko National University of Kyiv, Institute of High Technologies of Kyiv

DOI:

https://doi.org/10.15407/ujpe57.5.545

Keywords:

Abstract

The mechanisms of charge carrier injection into Tі–TіО₂–(n, p)Sі heterostructures have been studied. The influence of the porous TiO₂ structure and the silicon substrate type on the electrical characteristics of heterostructures is analyzed. The charge transfer is shown to be accompanied by the appearance of a compensating polarization charge on the surface of TiO₂nanoparticles. Correlations between the type of adsorbed molecules and the conditions of the current flow have been determined. In Ті–ТіО₂–p-Sі heterostructures, a change of the ratio between the numbers of injected electrons and holes can lead to the negative-conductivity effect.

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Published

2012-05-30

How to Cite

Milovanov Ю., Gavrilchenko І., Gayvoronsky В., Kuznetsov Г., & Skryshevsky В. (2012). Peculiarities of Current Transport in Titanium Oxide-Silicon Heterostructures. Ukrainian Journal of Physics, 57(5), 545. https://doi.org/10.15407/ujpe57.5.545

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Issue

Vol. 57 No. 5 (2012)

Section

Nanosystems

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