Radiation-induced Rearrangement of Defects in Silicon Crystals

Authors

  • B.V. Pavlyk Ivan Franko National University of L'viv
  • R.M. Lys Ivan Franko National University of L'viv
  • A.S. Hrypa Ivan Franko National University of L'viv
  • D.P. Slobodzyan Ivan Franko National University of L'viv
  • I.O. Khvyshchun Ivan Franko National University of L'viv
  • I.A. Shykoryak Ivan Franko National University of L'viv
  • R.I. Didyk Ivan Franko National University of L'viv

DOI:

https://doi.org/10.15407/ujpe56.1.64

Keywords:

-

Abstract

Physical and mathematical models of the radiation-induced ordering of a defect structure in silicon crystals are proposed. These
models involve an increase of the diffusion coefficient of interstitial silicon in the irradiation field and a reduction of the defect lifetime at irradiation doses below 260 Gy. Free surfaces of crystals, phase interfaces, and dislocations are considered to be effective defect sinks.

References

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Published

2022-02-17

How to Cite

Pavlyk Б., Lys Р., Hrypa А., Slobodzyan Д., Khvyshchun І., Shykoryak Й., & Didyk Р. (2022). Radiation-induced Rearrangement of Defects in Silicon Crystals. Ukrainian Journal of Physics, 56(1), 64. https://doi.org/10.15407/ujpe56.1.64

Issue

Section

Solid matter