Mechanical Modification of Electronic Properties of Ul-trathin β-Ga2O3 Films
DOI:
https://doi.org/10.15407/ujpe66.12.1048Keywords:
, ab initio calculations, mechanical compressionAbstract
Using the methods of the electronic density functional and pseudopotential theories, the spatial distributions of the valence electron density, the density of electronic states, and the gap widths in thin β-Ga2O3 films with various free surfaces subjected to mechanical compression are obtained from the first principles and using the author’s program code. It is shown that the thickness of the β-Ga2O3 films, the type of their free surface, and the mechanical action of compression allow the conductive properties of β-Ga2O3 thin films to be controlled.
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