Miniband Electrical Conductivity in Superlattices of Spherical InAs/GaAs Quantum Dots

Authors

  • V. I. Boichuk Department of Theoretical and Applied Physics and Computer Simulation, Ivan Franko State Pedagogical University of Drohobych
  • I. V. Bilynskyi Department of Theoretical and Applied Physics and Computer Simulation, Ivan Franko State Pedagogical University of Drohobych
  • R. I. Pazyuk Department of Theoretical and Applied Physics and Computer Simulation, Ivan Franko State Pedagogical University of Drohobych

DOI:

https://doi.org/10.15407/ujpe62.04.0334

Keywords:

quantum dot, superlattice, electron states, miniband, electrical conductivity

Abstract

The electrical properties of nanoscale semiconductor InAs/GaAs heterosystems with 2D-superlattices of spherical quantum dots have been studied. The dependences of the electron group velocity on the wave vector and the miniband quantum number are obtained. The dependences of the Fermi level of electrons in minibands on the concentration of donor impurities, donor energy, and temperature are found. The temperature dependences of the majority carrier concentration and the electrical conductivity are analyzed for various donor concentrations and energies.

Published

2018-12-15

How to Cite

Boichuk, V. I., Bilynskyi, I. V., & Pazyuk, R. I. (2018). Miniband Electrical Conductivity in Superlattices of Spherical InAs/GaAs Quantum Dots. Ukrainian Journal of Physics, 62(4), 335. https://doi.org/10.15407/ujpe62.04.0334

Issue

Section

Nanosystems