Laser-Induced Crystallization of Ge/Sn Multilayer Amorphous Films

Authors

  • V.O. Yukhymchuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • P.M. Lytvyn V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • N.V. Mazur V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • S.V. Antonin V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • O.A. Kapush V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • O.F. Isaieva V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • O.I. Gudymenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • V.M. Dzhagan V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • A.M. Dmytruk Institute of Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe71.11.901

Keywords:

GeSn thin films, laser annealing, nanosecond laser, femtosecond laser, XRD, SEM, SIMS, Raman spectroscopy, segregation

Abstract

A comparative analysis of the structural, morphological, and optical properties of 150-nm-thick polycrystalline GeSn films formed by laser annealing of amorphous multilayer heterostructures on a Ge/Si(100) buffer layer using two types of radiation – pulsed nanosecond (λ = 355 nm) and femtosecond (λ = 800 nm) was carried out. According to Raman spectroscopy and X-ray diffraction data, pulsed nanosecond UV annealing within a narrow pulse energy density range of 0.2–0.3 J/cm² is most effective for preserving surface planarity and achieving maximum substitutional incorporation of tin (up to 10.3 at.% Sn). Femtosecond annealing provides a lower level of tin incorporation (7.5 at.%) due to intermixing of Sn and Ge elements at the interface between the film and the buffer layer, as confirmed by secondary ion mass spectrometry profiles. It is shown that the surface morphology of the films under these two types of laser processing also differs substantially; in particular, femtosecond annealing causes self-organization of laser-induced periodic surface structures (LIPSS), which are promising for application in specialized optoelectronic devices.

References

1. J.M. Carmona-Sanchez, J. Tiscareno-Ramirez, V. Aca-Aca, A. Hernández-Flores et al. Formation and structural characterization of amorphous GeSn thin films via solid-state Sn diffusion into hydrogenated amorphous germanium. J. Alloys and Compounds 1074, 189195 (2026).

https://doi.org/10.1016/j.jallcom.2026.189195

2. S. Gougam, M.A. Schubert, G. Capellini, M.H. Zoellner. Delayed epitaxial breakdown in MBE-grown GeSn epitaxial layers by high deposition rate and temperatures. J. Phys. D: Appl. Phys. 59, 275106 (2026).

https://doi.org/10.1088/1361-6463/ae83c5

3. A.A. Corley-Wiciak, I. Zaitsev, O. Concepcion, D. Buca et al. Shedding light on epitaxial SiGeSn alloys with Raman spectroscopy: local order and thermomechanical properties. J. Phys.: Condens. Matter. 37, 493002 (2025).

https://doi.org/10.1088/1361-648X/ae1c0b

4. S. Gupta, B. Magyari-Kope, Y. Nishi, K.C. Saraswat. Achieving direct band gap in germanium through integration of Sn alloying and external strain. J. Appl. Phys. 113, 073707 (2013).

https://doi.org/10.1063/1.4792649

5. S. Zaima, O. Nakatsuka, N. Taoka et al. Growth and applications of GeSn-related group-IV semiconductor materials. Sci. Technol. Adv. Mater. 16, 043502 (2015).

https://doi.org/10.1088/1468-6996/16/4/043502

6. R.W. Olesinski, G.J. Abbaschian. The Ge-Sn (Germanium-Tin) system. Bull. Alloy Phase Diagrams 5, 265 (1984).

https://doi.org/10.1007/BF02868550

7. S.V. Kondratenko, Y.V. Hyrka, Y.I. Mazur, A.V. Kuchuk et al. Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1−xSnx thin films on a Ge/Si (001) substrate. Acta Mater. 171, 40 (2019).

https://doi.org/10.1016/j.actamat.2019.04.004

8. S. Acharya, A. Fischer, N. Rosson, A. Said, H. Stanchu et al. High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K. J. Appl. Phys. 138, 173101 (2025).

https://doi.org/10.1063/5.0287945

9. V.O. Yukhymchuk, G.G. Tarasov, M.Ya. Valakh, P.M. Lytvyn et al. Synthesis of Ge1−xSnx and Ge1−x−ySnxCy films by magnetron sputtering followed by laser annealing. Semicond. Phys., Quantum Electron. & Optoelectron. 29 (1), 019 (2026).

https://doi.org/10.15407/spqeo29.01.019

10. V.O. Yukhymchuk, P.M. Lytvyn, A.A. Korchovyi, O.Yo. Gudymenko et al. Laser-induced crystallisation of amorphous GeSn and GeSn:C films. Mater. Res. Express 12, 115004 (2025).

https://doi.org/10.1088/2053-1591/ae1d3d

11. V.O. Yukhymchuk, O.Yo. Gudymenko, T.M. Sabov, O.V. Dubikovskyi et al. Formation and properties of GeSn:C films on silicon substrates. Semicond. Phys., Quantum Electron. & Optoelectron. 27 (4), 412 (2024).

https://doi.org/10.15407/spqeo27.04.412

12. X. Wang, D. Qi, W. Zhou, H. Deng, Yu. Liu et al. Effect of Laser Pulse Width and Intensity Distribution on the Crystallographic Characteristics of GeSn Film. Coatings 13, 453 (2023).

https://doi.org/10.3390/coatings13020453

13. J. Zhang, S. Shangguan, W. Wang, W. Shi et al. Study on the Periodic Structure of Polycrystalline GeSn Prepared by Femtosecond Pulse Laser Direct Writing. SSRN Electronic Journal, http://dx.doi.org/10.2139/ssrn.4402223 (2023).

https://doi.org/10.2139/ssrn.4402223

14. O. Aktas, A.C. Peacock. Laser thermal processing of group IV semiconductors for integrated photonic systems. Adv. Photonics Res. 2, 2000159 (2021).

https://doi.org/10.1002/adpr.202000159

15. J. Bonse. Quo vadis LIPSS? - Recent and future trends on laser-induced periodic surface structures. Nanomaterials 10, 1950 (2020).

https://doi.org/10.3390/nano10101950

16. H. Lin, R. Chen, Yi. Huo et al. Raman study of strained Ge1−xSnx alloys. Appl. Phys. Lett. 98, 261917 (2011).

https://doi.org/10.1063/1.3606384

17. T. Imajo, T. Suemasu, K. Toko. Strain effects on polycrystalline germanium thin films. Sci. Rept. 11, 8333 (2021).

https://doi.org/10.1038/s41598-021-87616-x

18. L.B. Freund, S. Suresh. Thin Film Materials (Cambridge Univ. Press, 2010).

19. Yi. Jie, A.T.S. Wee, C.H.A. Huan, Z.X. Shen, W.K. Choi. Phonon confinement in Ge nanocrystals in silicon oxide matrix. J. Appl. Phys. 109, 033107 (2011).

https://doi.org/10.1063/1.3503444

20. J.I. Langford, A.J.C. Wilson. Scherrer after sixty years: A survey and some new results in the determination of crystallite size. J. Appl. Crystallogr. 11 (2), 102 (1978).

https://doi.org/10.1107/S0021889878012844

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Published

2026-10-29

Issue

Vol. 71 No. 11 (2026)

Section

Semiconductors and dielectrics

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How to Cite

Laser-Induced Crystallization of Ge/Sn Multilayer Amorphous Films. (2026). Ukrainian Journal of Physics, 71(11), 901. https://doi.org/10.15407/ujpe71.11.901

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