Optical Polarization Anisotropy, Intrinsic Stark Effect and Coulomb Effects on the Lasing Characteristics of [0001]-Oriented GaN/Al0.3Ga0.7N Quantum Wells
DOI:
https://doi.org/10.15407/ujpe57.1.12Keywords:
-Abstract
We present a theoretical investigation of space separated electron and hole distributions, which consists in the self-consistent solving of the Schrödinger equations for electrons and holes and the Poisson equation. The results are illustrated for the\linebreak GaN/Al0.3Ga0.7N quantum well. The optical gain spectrum in a [0001]-oriented GaN/Al0.3Ga0.7N quantum well in the ultraviolet region is calculated. It is found that both the matrix elements of optical transitions from the heavy hole band and the optical gain spectrum have only the strict x (or y) light polarization. We present studies of the influence of the confinement of wave functions on the optical gain which implicitly depends on the built-in electric field calculated to be 2.3 MV/cm. Whereas the structures with narrow well widths exhibit the usual development of the light gain maximum almost without shifting the spectral region, a significant blueshift of the gain maximum is found with increase in the plasma density for wider quantum wells. This blueshift is ascribed to the interplay between the screening of a strain-induced piezoelectric field and the bandstructure. A large Sommerfeld or Coulomb enhancement is present in the quantum well.
References
S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997)
https://doi.org/10.1007/978-3-662-03462-0
R.L. Aggarwal, P.A. Maki, Z.-L. Liau, and I. Melngailis, J. Appl. Phys. 79, 2148 (1996)
https://doi.org/10.1063/1.361044
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys. 1 35, L74 (1996)
https://doi.org/10.1143/JJAP.35.L74
S. Nakamura, J. Vac. Sci. Technol. A 13, 705 (1995).
https://doi.org/10.1116/1.588177
N. Savage, Nature Photonics 1, 83 (2007).
https://doi.org/10.1038/nphoton.2006.95
A. Khan, K. Balakrishnan, and T. Katona, Nature Photonics 2, 77 (2008).
https://doi.org/10.1038/nphoton.2007.293
Y. Taniyasu, M. Kasu, and T. Makimoto, Nature Lett. 441, 325 (2006).
https://doi.org/10.1038/nature04760
A.H. Mueller, M.A. Petruska, M. Achermann, D.J. Werder, E.A. Akhadov, D.D. Koleske, M.A. Hoffbauer, and V.I. Klimov, NanoLetters 5, 1039 (2005).
https://doi.org/10.1021/nl050384x
T. Wang, S. Wu, K.B. Lee, J. Bai, P.J. Parbrook, R.J. Airey, Q. Wang, G. Hill, F. Ranalli, and A.G. Gullis, Appl. Phys. Lett. 89, 081126 (2006).
https://doi.org/10.1063/1.2338784
B.F. Chu-Kung, M. Feng, G. Walter, N. Holonyak, jr., T. Chung, J. -H. Ryou, J. Limb, D. Yoo, S.-C. Shen, R.D. Dupuis, D. Keogh, and P.M. Asbeck, Appl. Phys. Lett. 89, 082108 (2006).
https://doi.org/10.1063/1.2336619
H. Hirayama, J. Appl. Phys. 97, 091101 (2005).
https://doi.org/10.1063/1.1899760
T. Asano, M. Takeya, T. Mizuno, S. Ikeda, K.K. Shibuya, T. Hino, S. Uchida, and M. Ikeda, Appl. Phys. Lett. 80, 3497 (2002).
https://doi.org/10.1063/1.1478157
S.-N. Lee, S.Y. Cho, H.Y. Ryu, J.K. Son, H.S. Paek, T. Jang, K.K. Choi, K.H. Ha, M.H. Yang, O.H. Nam, Y. Park, and E. Yoon, Appl. Phys. Lett. 88, 111101 (2006).
https://doi.org/10.1063/1.2185251
L.L. Gaddard, S.R. Bank, M.A. Wistey, H.B. Yuen, Z. Rao, and J.S. Harris, jr., J. Appl. Phys. 97, 083101 (2005).
https://doi.org/10.1063/1.1873035
E. Feltin, D. Simeonov, J.-F. Carlin, R. Butte, and N. Grandjean, Appl. Phys. Lett. 90, 021905 (2007).
https://doi.org/10.1063/1.2429027
H. Yoshida, Y. Yamashita, M. Kuwabara, and H. Kan, Nature Photonics 2, 551 (2008).
https://doi.org/10.1038/nphoton.2008.135
W. Chow, M. Kira, and S.W. Koch, Phys. Rev. B 60, 1947 (1999).
https://doi.org/10.1103/PhysRevB.60.1947
S.L. Chuang, J. Quantum Electron. 32, 1791 (1996).
https://doi.org/10.1109/3.538786
W.W. Chow and M. Kneissl, J. Appl. Phys. 98, 114502 (2005).
https://doi.org/10.1063/1.2128495
J. Wang, J.B. Jeon, Yu.M. Sirenko, and K.W. Kim, Photon. Techn. Lett. 9, 728 (1997).
https://doi.org/10.1109/68.584971
E.I. Rashba, Sov. Phys. Solid State 1, 368 (1959)
E.I. Rashba and V.I. Sheka, ibid, 162 (1959)
G.E. Pikus, Sov. Phys. JETP 14, 898 (1962).
G.L. Bir and G.E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
P.Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996).
Yu.M. Sirenko, J.-B. Jeon, K.W. Kim, M.A. Littlejohn, and M.A. Stroscio, Phys. Rev. B 53, 1997 (1996).
https://doi.org/10.1103/PhysRevB.53.1997
R.G. Banal, M. Funato, and Y. Kawakami, Phys. Rev. B 79, 121308(R) (2009).
https://doi.org/10.1103/PhysRevB.79.121308
L.D. Landau and E.M. Lifshitz, Quantum Mechanics (Pergamon Press, Oxford, 1977).
G. Bastard, E.E. Mendez, L.L. Chang, and L. Esaki, Phys. Rev. B 28, 3241 (1983).
https://doi.org/10.1103/PhysRevB.28.3241
I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
https://doi.org/10.1063/1.1368156
Semiconductors, edited by O. Madelung (Springer, Berlin, 1991); W. Shan, T.J. Schmidt, X.H. Yang, S.J. Hwang, J.J. Song, and B. Goldenberg, Appl. Phys. Lett. 66, 985 (1995).
https://doi.org/10.1063/1.113820
Yu.M. Sirenko, J.-B. Jeon, B.C. Lee, K.W. Kim, M.A. Littlejohn, M.A. Stroscio, and G.I. Iafrate, Phys. Rev. B 55, 4360 (1997).
https://doi.org/10.1103/PhysRevB.55.4360
S.L. Chuang and C.S. Chang, Phys. Rev. B 54, 2491 (1996).
https://doi.org/10.1103/PhysRevB.54.2491
M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52, 8132 (1995).
https://doi.org/10.1103/PhysRevB.52.8132
S.L. Chuang, C.S. Chang, and A. Yanase, Phys. Rev. B 54, 2491 (1996).
https://doi.org/10.1103/PhysRevB.54.2491
V.V. Mitin, V.A. Kochelap, and M.A. Stroscio, Quantum Heterostructures (Cambridge Univ. Press, New York, 1999).
L.O. Lokot, Semicon. Phys. Quantum Electron. Optoelectron. 11, 364 (2008)
https://doi.org/10.15407/spqeo11.04.364
L.O. Lokot, Ukr. Fiz. Zh. 54, 964 (2009).
M. Lindberg and S.W. Koch, Phys. Rev. B 38, 3342 (1988).
https://doi.org/10.1103/PhysRevB.38.3342
W.W. Chow, S.W. Koch, and M. Sargent III, Semiconductor Laser Physics (Springer, New York, 1994).
https://doi.org/10.1007/978-3-642-61225-1
H. Haug and S. Schmitt-Rink, Prog. Quant. Electr. 9, 3 (1984).
Downloads
Published
How to Cite
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
