Influence of Growth Conditions on Structural and Optical Properties of Zn0.9Cd0.1O Films

Authors

  • I.I. Shtepliuk I.M. Frantsevich Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
  • G.V. Lashkarev I.M. Frantsevich Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
  • V.V. Khomyak Yu. Fedkovych Chernivitsi National University
  • O.S. Lytvyn V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • P.D. Marianchuk Yu. Fedkovych Chernivitsi National University
  • I.I. Timofeeva I.M. Frantsevich Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
  • A.I. Evtushenko I.M. Frantsevich Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine
  • V.I. Lazorenko I.M. Frantsevich Institute for Problems of Materials Science, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe57.6.653

Keywords:

-

Abstract

The influence of the magnetron power and the gas ratio Ar:O2 on the microstructure and the optical properties of Zn0.9Cd0.1O films is studied. The films were deposited with the use of the dc magnetron sputtering technique at a temperature of 250 ºC. Atomic force microscopy (AFM) and X-ray diffraction (XRD) researches of a surface morphology demonstrated a strong influence of deposition procedure parameters on the film microstructure. The XRD analysis revealed that all grown films were polycrystalline and single-phase. The increase of the gas ratio Ar:O2 was found to be beneficial for the crystalline structure of Zn0.9Cd0.1O ternary alloys. Peculiarities of the control over the band gap and the surface morphology for Zn0.9Cd0.1O ternary alloys by varying the growth parameters are discussed.

References

A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nature Mater. 4, 42 (2005).

https://doi.org/10.1038/nmat1284

Z.P. Wei, Y.M. Lu, D.Z. Shen, Z.Z. Zhang, B. Yao, B.H. Li, J.Y. Zhang, D.X. Zhao, X.W. Fan, and Z.K. Tang, Appl. Phys. Lett. 90, 042113 (2007).

https://doi.org/10.1063/1.2435699

J.M. Qin, B. Yao, Y. Yan, J.Y. Zhang, X.P. Jia, Z.Z. Zhang, B.H. Li, C.X. Shan, and D.Z. Shen, Appl. Phys. Lett. 95, 022101 (2009).

https://doi.org/10.1063/1.3153515

B.P. Zhang, N.T. Binh, K. Wakatsuki, C.Y. Liu, Y. Segawa, and N. Usami, Appl. Phys. Lett. 86, 032105 (2005).

https://doi.org/10.1063/1.1850594

H.D. Sun, T. Makino, N.T. Tuan, Y. Segawa, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, Appl. Phys. Lett. 77, 4250 (2000).

https://doi.org/10.1063/1.1333687

A. Janotti and C.G.V. De Walle, Rep. Prog. Phys. 72, 126501 (2009).

https://doi.org/10.1088/0034-4885/72/12/126501

J.J. Chen, F. Ren, D.P. Norton, S.J. Pearton, A. Osinsky, J.W. Dong, and S.N.G. Chu, Electrochem. Solid-State Lett. 8, G359 (2005).

https://doi.org/10.1149/1.2119447

F.Z. Wang, H.P. He, Z.Z. Ye, and L.P. Zhu, J. Appl. Phys. 98, 084301 (2005).

https://doi.org/10.1063/1.2089164

K. Sakurai, T. Takagi, T. Kubo, D. Kajita, T. Tanabe, H. Takasu, S. Fujita, and S. Fujita, J. Cryst. Growth 514, 237 (2002).

https://doi.org/10.1016/S0022-0248(01)01954-6

X.J. Wang, I.A. Buyanova, W.M. Chen, M. Izadifard, S. Rawal, D.P. Norton, S.J. Pearton, A. Osinsky, J.W. Dong, and A. Dabiran, Appl. Phys. Lett. 89, 151909 (2006).

https://doi.org/10.1063/1.2361081

J. Zuniga-Perez, V. Munoz-Sanjose, M. Lorenz, G. Benndorf, S. Heitsch, D. Spemann, and M. Grundmann, J. Appl. Phys. 99, 023514 (2006).

https://doi.org/10.1063/1.2163014

J. Ishihara, A. Nakamura, S. Shigemori, T. Aoki, and J. Temmyo, Appl. Phys. Lett. 89, 091914 (2006).

https://doi.org/10.1063/1.2345232

S. Kalusniak, S. Sadofev, J. Puls, and F. Henneberger, Laser Photonics Rev. 3, 233 (2009).

https://doi.org/10.1002/lpor.200810040

A.V. Thompson, C. Boutwell, J.W. Mares, W.V. Schoenfeld, A. Osinsky, B. Hertog, J.Q. Xie, S.J. Pearton, and D.P. Norton, Appl. Phys. Lett. 91, 201921 (2007).

https://doi.org/10.1063/1.2812544

I.A. Buyanova, X.J. Wang, G. Pozina, W.M. Chen, W. Lim, D.P. Norton, S.J. Pearton, A. Osinsky, J.W. Dong, and B. Hertog, Appl. Phys. Lett. 92, 261912 (2008).

https://doi.org/10.1063/1.2953178

T. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck, Appl. Phys. Lett. 83, 3290 (2003).

https://doi.org/10.1063/1.1620674

K. Ellmer, J. Phys. D 33, R17 (2000).

https://doi.org/10.1088/0022-3727/33/4/201

C. Suryanarayana and M.G. Norton, X-Ray Diffraction: A Practical Approach (Plenum, New York, 1998).

https://doi.org/10.1007/978-1-4899-0148-4

J. Albertsson, S.C. Abrahams, and A. Kvick, Acta Crystallogr. B 45, 34 (1989).

https://doi.org/10.1107/S0108768188010109

S.H. Park, T. Hanada, D.C. Oh, T. Minegishi, H. Goto, G. Fujimoto, J.S. Park, I.H. Im, J.H. Chang, M.W. Cho, T. Yao, and K. Inaba, Appl. Phys. Lett. 91, 231 904 (2007).

https://doi.org/10.1063/1.2813021

R. Cebulla, R. Wendt, and K. Ellmer, J. Appl. Phys. 83, 1087 (1998).

https://doi.org/10.1063/1.366798

B. Williamson and R.C. Smallman, Philos. Mag. 1, 34 (1956).

https://doi.org/10.1080/14786435608238074

X.S. Wang, Z.C. Wu, J.F. Webb, and Z.G. Liu, Appl. Phys. A 77, 561 (2003).

https://doi.org/10.1007/s00339-002-1497-2

C.R. Aita and R.J. Lad, J. Appl. Phys. 51, 6405 (1980).

https://doi.org/10.1063/1.327585

C.R. Aita, A.J. Purdes, R.J. Lad, and P.D. Funkenbusch, J. Appl. Phys. 51, 5533 (1980).

https://doi.org/10.1063/1.327472

D.J. Ball, J. Appl. Phys. 43, 3047 (1972).

https://doi.org/10.1063/1.1661657

T.E. Mody and J.T. Yates, J. Vac. Sci. Technol. 8, 525 (1971).

I. Brodie, L.T. Lamont, and D.O. Myers, J. Vac. Sci. Technol. 6, 124 (1969).

https://doi.org/10.1116/1.1492641

S. Thomas, J. Appl. Phys. 45, 161 (1974).

https://doi.org/10.1063/1.1662951

J. Verhoeven and J. Las, Surf. Sci. 58, 566 (1976). https://doi.org/10.1016/0039-6028(76)90490-8

Y. Margoninski, D. Segal, and R.E. Kirby, Surf. Sci. 53, 488 (1975). https://doi.org/10.1016/0039-6028(75)90148-X

F. Urbach, Phys. Rev. 92, 1324 (1953). https://doi.org/10.1103/PhysRev.92.1324

G.D. Cody, J. Non-Cryst. Solids 141, 3 (1992). https://doi.org/10.1016/S0022-3093(05)80513-7

Downloads

Published

2012-06-30

How to Cite

Shtepliuk І., Lashkarev Г., Khomyak В., Lytvyn О., Marianchuk П., Timofeeva І., Evtushenko А., & Lazorenko В. (2012). Influence of Growth Conditions on Structural and Optical Properties of Zn0.9Cd0.1O Films. Ukrainian Journal of Physics, 57(6), 653. https://doi.org/10.15407/ujpe57.6.653

Issue

Vol. 57 No. 6 (2012)

Section

Solid matter

License

Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine

The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:

1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.

2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.

3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.

4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.

5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.

6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.

Crossref
Scopus
Google Scholar
Europe PMC

Most read articles by the same author(s)