Physical Properties of Sensor Structures on the Basis of Silicon p−n Junction with Interdigitated Back Contacts
DOI:
https://doi.org/10.15407/ujpe57.12.1234Keywords:
-Abstract
The influence of the adsorption of water molecules on the photosensitivity of a silicon p–n junction with interdigitated back contacts has been studied. It has been shown that the examined structures can be used for the creation of effective chemical sensors.
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