My Scientific Contacts with V.E. Lashkarev
DOI:
https://doi.org/10.15407/ujpe59.08.0826Keywords:
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References
N.M. Omelyanovs'ka, V.G. Litovchenko, V.I. Strikha, and R.M. Bondarenko, Long-term inertial phenomena at the germanium point contact, in Scientific Annual for 1956 (Kyiv University, Kyiv, 1957).
V.I. Strikha, R.M. Bondarenko, N.M. Omelyanovs'ka, and V.G. Litovchenko, Influence of specific resistance and bulk lifetime of charge carriers in the material on the current sensitivity of centimeter-range radiation detectors, Visn. Kyiv. Univ. Ser. Fiz. Khim. No. 1 (1958).
V.E. Lashkarev, V.G. Litovchenko, N.M. Omelyanovs'ka, R.M. Bondarenko, and V.I. Strikha, Dependence of the foreign charge-carrier lifetime on the concentration of antimony impurity in germanium, Visn. Kyiv. Univ. Ser. Fiz. Khim. No. 1 (1958).
V.E. Lashkarev, V.G. Litovchenko, N.M. Omelyanovskaya, R.N. Bondarenko, and V.I. Strikha, Dependence of the lifetime of foreign charge carriers on the concentration of antomony impurity in germanium, Zh. Tekhn. Fiz. 27, 2437 (1957).
V.E. Lashkarev, R.M. Bondarenko, V.M. Dobrovolskyi, G.P. Zubrin, V.G. Litovchenko, and V.I. Strikha, Properties of germanium doped with beryllium, Ukr. Fiz. Zh. 4, 373 (1959).
V.E. Lashkarev, R.N. Bondarenko, V.N. Dobrovolskii, G.P. Zubrin, V.G. Litovchenko, and V.I. Strikha, Electric and recombination properties of germanium doped with beryllium, Fiz. Tverd. Tela, No. 2, 39 (1959).
V.I. Lyashenko and V.G. Litovchenko, Influence of molecular adsorption on the work function and conductivity of germanium (1. Amplitude characteristics; 2. Process kinetics), Zh. Tekhn. Fiz. 28, 447 (1958).
V.N. Dobrovolskii and V.G. Litovchenko, To the calculation of bulk lifetime and surface recombination rate of charge carriers, Prib. Tekhn. Eksp. No. 6 (1959).
V.G. Litovchenko, Calculation of the surface recombination rate and the bulk lifetime of charge carriers under nonsymmetrical boundary conditions, Ukr. Fiz. Zh. 4, 376 (1959).
V.G. Litovchenko, Research of quick surface states in silicon, Fiz. Tverd. Tela, 2, Special issue, 83 (1959).
V.G. Litovchenko and O.V. Snitko, Long-term variations of field effect in silicon, Fiz. Tverd. Tela 2 (1960).
V.G. Litovchenko and O.V. Snitko, Surface properties of silicon, Fiz. Tverd. Tela 2 (1960).
V.G. Litovchenko, The kinetics and amplitude characteristics of the small field effect at semiconductor surfaces during steady state illumination, Surf. Sci. 1, 291 (1964).
https://doi.org/10.1016/0039-6028(64)90032-9
V.G. Litovchenko and V.G. Popov, Surface Science and Microelectronics (Znanie, Moscow, 1990) (in Russian).
______________________________________
N.M. Omelyanovs'ka, V.G. Litovchenko, V.I. Strikha, and R.M. Bondarenko, Long-term inertial phenomena at the germanium point contact, in Scientific Annual for 1956 (Kyiv University, Kyiv, 1957).
V.I. Strikha, R.M. Bondarenko, N.M. Omelyanovs'ka, and V.G. Litovchenko, Influence of specific resistance and bulk lifetime of charge carriers in the material on the current sensitivity of centimeter-range radiation detectors, Visn. Kyiv. Univ. Ser. Fiz. Khim. No. 1 (1958).
V.E. Lashkarev, V.G. Litovchenko, N.M. Omelyanovs'ka, R.M. Bondarenko, and V.I. Strikha, Dependence of the foreign charge-carrier lifetime on the concentration of antimony impurity in germanium, Visn. Kyiv. Univ. Ser. Fiz. Khim. No. 1 (1958).
V.E. Lashkarev, V.G. Litovchenko, N.M. Omelyanovskaya, R.N. Bondarenko, and V.I. Strikha, Dependence of the lifetime of foreign charge carriers on the concentration of antomony impurity in germanium, Zh. Tekhn. Fiz. 27, 2437 (1957).
V.E. Lashkarev, R.M. Bondarenko, V.M. Dobrovolskyi, G.P. Zubrin, V.G. Litovchenko, and V.I. Strikha, Properties of germanium doped with beryllium, Ukr. Fiz. Zh. 4, 373 (1959).
V.E. Lashkarev, R.N. Bondarenko, V.N. Dobrovolskii, G.P. Zubrin, V.G. Litovchenko, and V.I. Strikha, Electric and recombination properties of germanium doped with beryllium, Fiz. Tverd. Tela, No. 2, 39 (1959).
V.I. Lyashenko and V.G. Litovchenko, Influence of molecular adsorption on the work function and conductivity of germanium (1. Amplitude characteristics; 2. Process kinetics), Zh. Tekhn. Fiz. 28, 447 (1958).
V.N. Dobrovolskii and V.G. Litovchenko, To the calculation of bulk lifetime and surface recombination rate of charge carriers, Prib. Tekhn. Eksp. No. 6 (1959).
V.G. Litovchenko, Calculation of the surface recombination rate and the bulk lifetime of charge carriers under nonsymmetrical boundary conditions, Ukr. Fiz. Zh. 4, 376 (1959).
V.G. Litovchenko, Research of quick surface states in silicon, Fiz. Tverd. Tela, 2, Special issue, 83 (1959).
V.G. Litovchenko and O.V. Snitko, Long-term variations of field effect in silicon, Fiz. Tverd. Tela 2 (1960).
V.G. Litovchenko and O.V. Snitko, Surface properties of silicon, Fiz. Tverd. Tela 2 (1960).
V.G. Litovchenko, The kinetics and amplitude characteristics of the small field effect at semiconductor surfaces during steady state illumination, Surf. Sci. 1, 291 (1964).
https://doi.org/10.1016/0039-6028(64)90032-9
V.G. Litovchenko and V.G. Popov, Surface Science and Microelectronics (Znanie, Moscow, 1990) (in Russian).
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