Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon

Authors

  • S. Zainabidinov Andijan State University
  • O. O. Mamatkarimov Namangan Engineering and Technology Institute
  • O. Khimmatkulov Tashkent State Technical University
  • I. G. Tursunov National University of Uzbekistan

DOI:

https://doi.org/10.15407/ujpe62.11.0957

Keywords:

deformation, impurities, strain resistance, elastic compression

Abstract

The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobility under the compression along crystallographic axis [111] is connected with a change in their scattering on large-scale defect formations.

References

A.L. Polyakova. Deformation of semiconductors and semiconductor devices [in Russian], (Energiya, 1979).

M.K. Bakhadyrkhanov, A.A. Tursunov, A. Abduraimov, et al. Izv. Acad. of Sci. of Uzbekistan, Ser. Fiz. 2, 53 (1988).

G.L. Bir, G.E. Pikus. Symmetry and Strain-Induced Effects in Semiconductors (Wiley, 1974).

M.G. Milvidsky, V.V. Chaldyshev. Nanometer-size atomic clusters in semiconductors – a new approach to tailoring material properties. Phys. and Technol. of Semicond. 32 (5), 457 (1998).

https://doi.org/10.1134/1.1187418

UJP 2017 V62 #11

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Published

2018-12-12

Issue

Vol. 62 No. 11 (2017)

Section

Solid matter

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How to Cite

Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon. (2018). Ukrainian Journal of Physics, 62(11), 957. https://doi.org/10.15407/ujpe62.11.0957

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