Investigations of the Deep-Level Parameters in Semiconductors


  • I. G. Tursunov Department of Physics, National University of Uzbekistan (Tashkent 100174, Uzbekistan)



deformation, impurities, strain resistance, hydrostatic pressure


We propose to use methods involving a deformation for the determination of deep-level parameters in semiconductors. The methods are based on the measurement of strain parameters of compensated and overcompensated semiconductors. The dynamic changes of the current flow in compensated and overcompensated samples of the p-type Si : Ni and n-type Si : Mn under a uniform pulse hydrostatic compression (UHC) are investigated. It is observed that, in the p-type Si : Ni samples the, ionization energy level of Ni increases at UHC. On the contrary, it decreases in samples of the n-type Si : Mn. The ionization energy and the baric coefficient of shift of Ni and Mn levels are bounded.


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How to Cite

Tursunov, I. G. (2018). Investigations of the Deep-Level Parameters in Semiconductors. Ukrainian Journal of Physics, 62(12), 1041.



Solid matter

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