Optical and Electrophysical Properties of 95% In2O3 + 5% SnO2/ns-Si Heterostructure

Authors

  • V. A. Vinichenko Taras Shevchenko National University of Kyiv, Faculty of Physics
  • V. V. Buchenko Taras Shevchenko National University of Kyiv, Faculty of Physics
  • N. S. Goloborodko Taras Shevchenko National University of Kyiv, Faculty of Physics
  • V. V. Lendel Taras Shevchenko National University of Kyiv, Faculty of Physics
  • A. E. Lushkin Taras Shevchenko National University of Kyiv, Faculty of Physics
  • V. N. Telega Taras Shevchenko National University of Kyiv, Faculty of Physics

DOI:

https://doi.org/10.15407/ujpe61.03.0240

Keywords:

current-voltage characteristics, absorption spectrum, thin films, transparent oxides

Abstract

Optical and electrical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructures with films 6 and 12 nm in thickness deposited on a nanostructured silicon surface by the magnetron sputtering have been considered. It is shown that the 6-nm film is characterized by several peaks in the optical absorption spectrum, while the 12-nm film has no absorption peaks in the same spectral interval. The influence of the environment and the optical irradiation on the electrical properties of 95% In2O3 + 5% SnO2/ns-Si structures is determined. Their response to the gas environment is shown to be governed by the dielectric permittivity of an adsorbate. The results obtained can be used in the development of resistive gas sensors based on 95% In2O3 + 5% SnO2/ns-Si films.

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UJP 2016 V61 #3

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Published

2019-01-06

Issue

Vol. 61 No. 3 (2016)

Section

Solid matter

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How to Cite

Optical and Electrophysical Properties of 95% In2O3 + 5% SnO2/ns-Si Heterostructure. (2019). Ukrainian Journal of Physics, 61(3), 240. https://doi.org/10.15407/ujpe61.03.0240

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