Effect of Gas Environment on Electrophysical Parameters of Heterojunctions on the Basis of Schottky Barrier with Nano-Structured (95% In2O3 + 5% SnO2) Oxide Films

  • V. V. Il'chenko Taras Shevchenko National University of Kyiv
  • O. M. Kostiukevych Taras Shevchenko National University of Kyiv
  • V. V. Lendiel Taras Shevchenko National University of Kyiv
  • V. I. Radko Taras Shevchenko National University of Kyiv
  • N. S. Goloborodko Taras Shevchenko National University of Kyiv
Keywords: gas sensors, adsorption, dielectric permittivity, image forces, Schottky barrier

Abstract

Electrophysical characteristics of gas-sensitive Ni – (95% In2O3 + 5% SnO2) – p-Si heterojunctions have been studied experimentally. The analysis of their current-voltage characteristics (CVCs) registered in various gas environments reveals a significant increase of the reverse current through specimens in the atmosphere of ethanol or isopropyl vapor. Various mechanisms of current flow through the heterojunction are considered to explain this phenomenon. Variations in the potential barrier height under the action of image forces are demonstrated to play a significant role in shifts of the reverse CVC branches of examined specimens. The image force changes are explained by the influence of the adsorbate on the dielectric permittivity of oxide films.

References

D. Kohl, J. Phys. D 34, R125 (2001). http://dx.doi.org/10.1088/0022-3727/34/19/201

G. Korotcenkov and B.K. Cho, Crit. Rev. Solid State Mater. Sci. 35, 1 (2010). http://dx.doi.org/10.1080/10408430903245369

G. Eranna, B.C. Joshi, D.P. Runthala, and R.P. Gupta, Crit. Rev. Solid State Mater. Sci. 29, 111 (2004). http://dx.doi.org/10.1080/10408430490888977

M.M. Arafat, B. Dinan, S.A. Akbar, and A.S.M.A. Haseeb, Sensors 12, 7207 (2012). http://dx.doi.org/10.3390/s120607207

V.A. Skryshevsky, O.V. Tretiak, V.A. Vikulov, V.M. Zinchuk, F. Koch, and Th. Dittrich, Phys. Status Solidi A 197, 534 (2003). http://dx.doi.org/10.1002/pssa.200306559

G. Zhang and M. Liu, Sensor. Actuat. B 69, 144 (2000). http://dx.doi.org/10.1016/S0925-4005(00)00528-1

S. Elouali, L.G. Bloor, R. Binions, I.P. Parkin, C.J. Carmalt, and J.A. Darr, Langmuir 28, 1879 (2012). http://dx.doi.org/10.1021/la203565h

H. Wang, K. Dou, W.Y. Teoh, Y. Zhan, T.F. Hung, F. Zhang, J. Xu, R. Zhang, and A.L. Rogach, Adv. Funct. Mater. 23, 4847 (2013). http://dx.doi.org/10.1007/978-3-642-33596-9

S.K. Gupta, A. Joshi, and M. Kaur, J. Chem. Sci. 122, 57 (2010). http://dx.doi.org/10.1007/s12039-010-0006-y

V.G. Litovchenko, T.I. Gorbanyuk, V.S. Solntsev, and A.A. Evtukh, Appl. Surf. Sci. 234, 262 (2004). http://dx.doi.org/10.1016/j.apsusc.2004.05.146

V. Strikha, V.A. Skryshevsky, V. Polishchuk, E. Souteyrand, and J.-R. Martin, J. Porous Mat. 7, 111 (2000). http://dx.doi.org/10.1023/A:1009634720436

D.B. Dimitrov, Phys. Rev. B 51, 1562 (1995). http://dx.doi.org/10.1103/PhysRevB.51.1562

D. Stievenard and D. Deresmes, J. Appl. Phys. Lett. 67, 1570 (1995). http://dx.doi.org/10.1063/1.114942

V.A. Vikulov, V.I. Strikha, V.A. Skryshevsky, S.S. Kilchitskaya, E. Souteyrand, and J.-R. Martin, J. Phys. D 33, 1957 (2000). http://dx.doi.org/10.1088/0022-3727/33/16/304

V.I. Strikha, Contact Phenomena in Semiconductors (Vyshcha Shkola, Kyiv, 1982) (in Russian).

E.H. Rhoderick, Metal–Semiconductor Contacts (Clarendon Press, Oxford, 1978).

V.S. Solntsev, V.G. Litovchenko, T.I. Gorbanyuk, and A.A. Evtukh, SPQEO 11, 381 (2008).

O.Y. Bomk, L.G. Ilchenko, V.V. Ilchenko, G.V. Kuznetsov, V.M. Pinchuk, O.M. Pinchuk, and B.I. Strikha, Ukr. Fiz. Zh. 44, 759 (1999).

Y. Hijikata, Physics and Technology of Silicon Carbide Devices (InTech, 2002).

Published
2019-01-08
How to Cite
Il’chenko, V., Kostiukevych, O., Lendiel, V., Radko, V., & Goloborodko, N. (2019). Effect of Gas Environment on Electrophysical Parameters of Heterojunctions on the Basis of Schottky Barrier with Nano-Structured (95% In2O3 + 5% SnO2) Oxide Films. Ukrainian Journal of Physics, 61(1), 38. https://doi.org/10.15407/ujpe61.01.0038
Section
Solid matter