Laser-Stimulated Enhancement of the Reflectance of Single-Crystalline n-GaAs(100)

Authors

  • P. O. Gentsar V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • O. I. Vlasenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • S. M. Levytskyi V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe62.11.0953

Keywords:

n-GaAs(100), laser irradiation, reflection spectra, refractive index, near-surface layer

Abstract

The results of optical researches concerning the reflection spectra of n-GaAs(100) single crystals with a specific resistance of 10 Ωcm (at room temperature) measured in a light wave-length interval of 0.2–1.7 мm before and after the laser irradiation to an energy dose of 66–108 mJ/cm2 are reported. The experiment revealed a growth in the reflectance of the examined crystals after their laser treatment. This integral effect is explained as a result of the difference between the optical characteristics (the complex refractive index) in the near-surface layer and in the bulk of the irradiated material.

References

P.O. Gentsar, O.I. Vlasenko, S.M. Levytskyi, I.B. Yanchuk, S.P. Lavoryk. Influence of laser radiation on optical properties of thin Ge1− Si near-surface layers. Fiz. Khim. Tverd. Tila 15, 303 (2014) (in Ukrainian).

P.O. Gentsar, O.I. Vlasenko, S.M. Levytskyi, V.A. Gnatyuk. Laser-stimulated enhancement of semiconductor reflectance. Fiz. Khim. Tverd. Tila 15, 856 (2014) (in Ukrainian).

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https://doi.org/10.15407/hftp07.02.186

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https://doi.org/10.1007/978-3-642-00710-1

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UJP 2017 V62 #11

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Published

2018-12-12

Issue

Vol. 62 No. 11 (2017)

Section

Optics, lasers, and quantum electronics

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How to Cite

Laser-Stimulated Enhancement of the Reflectance of Single-Crystalline n-GaAs(100). (2018). Ukrainian Journal of Physics, 62(11), 953. https://doi.org/10.15407/ujpe62.11.0953

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