Influence of Divacancy-Oxygen Defects on Recombination Properties of n-Si Subjected to Irradiation and Subsequent Annealing. Ukr. J. Phys. [Internet]. 2018 Dec. 9 [cited 2026 Sep. 11];63(12):1095. Available from: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018178