Effect of Gas Environment on Electrophysical Parameters of Heterojunctions on the Basis of Schottky Barrier with Nano-Structured (95% In2O3 + 5% SnO2) Oxide Films

Authors

  • V. V. Il'chenko Taras Shevchenko National University of Kyiv
  • O. M. Kostiukevych Taras Shevchenko National University of Kyiv
  • V. V. Lendiel Taras Shevchenko National University of Kyiv
  • V. I. Radko Taras Shevchenko National University of Kyiv
  • N. S. Goloborodko Taras Shevchenko National University of Kyiv

DOI:

https://doi.org/10.15407/ujpe61.01.0038

Keywords:

gas sensors, adsorption, dielectric permittivity, image forces, Schottky barrier

Abstract

Electrophysical characteristics of gas-sensitive Ni – (95% In2O3 + 5% SnO2) – p-Si heterojunctions have been studied experimentally. The analysis of their current-voltage characteristics (CVCs) registered in various gas environments reveals a significant increase of the reverse current through specimens in the atmosphere of ethanol or isopropyl vapor. Various mechanisms of current flow through the heterojunction are considered to explain this phenomenon. Variations in the potential barrier height under the action of image forces are demonstrated to play a significant role in shifts of the reverse CVC branches of examined specimens. The image force changes are explained by the influence of the adsorbate on the dielectric permittivity of oxide films.

References

D. Kohl, J. Phys. D 34, R125 (2001). http://dx.doi.org/10.1088/0022-3727/34/19/201

G. Korotcenkov and B.K. Cho, Crit. Rev. Solid State Mater. Sci. 35, 1 (2010). http://dx.doi.org/10.1080/10408430903245369

G. Eranna, B.C. Joshi, D.P. Runthala, and R.P. Gupta, Crit. Rev. Solid State Mater. Sci. 29, 111 (2004). http://dx.doi.org/10.1080/10408430490888977

M.M. Arafat, B. Dinan, S.A. Akbar, and A.S.M.A. Haseeb, Sensors 12, 7207 (2012). http://dx.doi.org/10.3390/s120607207

V.A. Skryshevsky, O.V. Tretiak, V.A. Vikulov, V.M. Zinchuk, F. Koch, and Th. Dittrich, Phys. Status Solidi A 197, 534 (2003). http://dx.doi.org/10.1002/pssa.200306559

G. Zhang and M. Liu, Sensor. Actuat. B 69, 144 (2000). http://dx.doi.org/10.1016/S0925-4005(00)00528-1

S. Elouali, L.G. Bloor, R. Binions, I.P. Parkin, C.J. Carmalt, and J.A. Darr, Langmuir 28, 1879 (2012). http://dx.doi.org/10.1021/la203565h

H. Wang, K. Dou, W.Y. Teoh, Y. Zhan, T.F. Hung, F. Zhang, J. Xu, R. Zhang, and A.L. Rogach, Adv. Funct. Mater. 23, 4847 (2013). http://dx.doi.org/10.1007/978-3-642-33596-9

S.K. Gupta, A. Joshi, and M. Kaur, J. Chem. Sci. 122, 57 (2010). http://dx.doi.org/10.1007/s12039-010-0006-y

V.G. Litovchenko, T.I. Gorbanyuk, V.S. Solntsev, and A.A. Evtukh, Appl. Surf. Sci. 234, 262 (2004). http://dx.doi.org/10.1016/j.apsusc.2004.05.146

V. Strikha, V.A. Skryshevsky, V. Polishchuk, E. Souteyrand, and J.-R. Martin, J. Porous Mat. 7, 111 (2000). http://dx.doi.org/10.1023/A:1009634720436

D.B. Dimitrov, Phys. Rev. B 51, 1562 (1995). http://dx.doi.org/10.1103/PhysRevB.51.1562

D. Stievenard and D. Deresmes, J. Appl. Phys. Lett. 67, 1570 (1995). http://dx.doi.org/10.1063/1.114942

V.A. Vikulov, V.I. Strikha, V.A. Skryshevsky, S.S. Kilchitskaya, E. Souteyrand, and J.-R. Martin, J. Phys. D 33, 1957 (2000). http://dx.doi.org/10.1088/0022-3727/33/16/304

V.I. Strikha, Contact Phenomena in Semiconductors (Vyshcha Shkola, Kyiv, 1982) (in Russian).

E.H. Rhoderick, Metal–Semiconductor Contacts (Clarendon Press, Oxford, 1978).

V.S. Solntsev, V.G. Litovchenko, T.I. Gorbanyuk, and A.A. Evtukh, SPQEO 11, 381 (2008).

O.Y. Bomk, L.G. Ilchenko, V.V. Ilchenko, G.V. Kuznetsov, V.M. Pinchuk, O.M. Pinchuk, and B.I. Strikha, Ukr. Fiz. Zh. 44, 759 (1999).

Y. Hijikata, Physics and Technology of Silicon Carbide Devices (InTech, 2002).

UJP 2016 V61 #1

Downloads

Published

2019-01-08

Issue

Vol. 61 No. 1 (2016)

Section

Solid matter

License

Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine

The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:

1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.

2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.

3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.

4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.

5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.

6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.

How to Cite

Effect of Gas Environment on Electrophysical Parameters of Heterojunctions on the Basis of Schottky Barrier with Nano-Structured (95% In2O3 + 5% SnO2) Oxide Films. (2019). Ukrainian Journal of Physics, 61(1), 38. https://doi.org/10.15407/ujpe61.01.0038

Most read articles by the same author(s)