Features of Charge Transport in Mo/n-Si Structures with a Schottky Barrier

Authors

  • O. Ya. Olikh Taras Shevchenko National University of Kyiv, Faculty of Physics

DOI:

https://doi.org/10.15407/ujpe58.02.0126

Keywords:

inhomogeneous Schottky barrier, thermionic emission, silicon

Abstract

Forward and reverse current-voltage characteristics of Mo/n-Si Schottky barrier structures have been studied experimentally in the temperature range 130-330 K. The Schottky barrier height is found to increase and the ideality factor to decrease, as the temperature grows. The obtained results are analyzed in the framework of a non-uniform contact model. The average value and the standard deviation of a Schottky barrier height are determined to be 0.872 and 0.099 V, respectively, at T = 130220 K and 0.656 and 0.036 V, respectively, at T = 230330 K. Thermionic emission over the non-uniform barrier and tunneling are shown to be the dominant processes of charge transfer at a reverse bias voltage.

UJP 2013 V58 #2

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Published

2018-10-05

Issue

Vol. 58 No. 2 (2013)

Section

Solid matter

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How to Cite

Features of Charge Transport in Mo/n-Si Structures with a Schottky Barrier. (2018). Ukrainian Journal of Physics, 58(2), 126. https://doi.org/10.15407/ujpe58.02.0126

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