Excitonic Parameters of InxGa1-xAs-GaAs Heterostructures with Quantum Wells at Low Temperatures

Authors

  • N. M. Litovchenko V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • D. V. Korbutyak V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
  • O. M. Strilchuk V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine

DOI:

https://doi.org/10.15407/ujpe58.03.0260

Keywords:

photoluminescence, quantum well, exciton, phonon

Abstract

Characteristics of GaAs/InxGa1 xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their corresponding theoretical analysis. The experimentally obtained temperature dependences of the energy position of the PL band maximum, hmax, band half-width, W0, and intensity, I, are examined. The values of energy of local phonons, Eph, exciton binding energy, Eex, and the Huang–Rhys factor, N, are determined. A comparison between the values obtained for those quantities and the growth parameters of considered specimens allowed us to assert that the highest-quality specimens are those that are characterized by low N values and one-mode phonon spectra.

UJP 2013 V58 #3

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Published

2018-10-06

Issue

Vol. 58 No. 3 (2013)

Section

Nanosystems

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How to Cite

Excitonic Parameters of InxGa1-xAs-GaAs Heterostructures with Quantum Wells at Low Temperatures. (2018). Ukrainian Journal of Physics, 58(3), 260. https://doi.org/10.15407/ujpe58.03.0260

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