Spectrum and Optical Contrastivity of an Oxidized Comb-Like Silicon Photonic Crystal

Authors

  • E. Ya. Glushko Institute of Semiconductor Physics

DOI:

https://doi.org/10.15407/ujpe59.10.0967

Keywords:

photonic bandgap materials, photonic resonators, trapped modes, oxidation, reflection, transmission

Abstract

A typical oxidized ternary photonic crystal – A/B/A/C N-periodic structure – is investigated analytically and numerically in the framework of the transfer matrix formalism. The influence of the oxidation on photonic gaps and the positions of perfect reflection areas for (SiO2/Si/SiO2/Air)N structure is calculated with regard for a transformation of the widths of silicon oxide layers. It is shown that the intrinsic optical contrastivity has a non-monotone behavior during the process of oxidation of silicon in the case of p-polarized electromagnetic waves. The found results will allow one to determine the optimal regimes of oxidation to obtain the needed optical properties of a photonic material.

References

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Published

2018-10-25

How to Cite

Glushko, E. Y. (2018). Spectrum and Optical Contrastivity of an Oxidized Comb-Like Silicon Photonic Crystal. Ukrainian Journal of Physics, 59(10), 967. https://doi.org/10.15407/ujpe59.10.0967

Issue

Section

Optics, lasers, and quantum electronics