On the Work Function and Schottky Barrier Heights of Metal Nanofilms in a Dielectric Environment

Authors

  • A. V. Babich Zaporizhzhya National Technical University

DOI:

https://doi.org/10.15407/ujpe59.01.0038

Keywords:

metal nanofilm, dielectric, work function, surface energy, Schottky barrier height

Abstract

We suggest a method for self-consistent calculations of the characteristics of metal films in a dielectric environment. Within a modified Kohn–Sham method and the stabilized jellium model, the most interesting case of asymmetric metal-dielectric sandwiches is considered, for which the dielectric media are different on the two sides of the film. We calculate the spectrum, electron work function, and surface energy of polycrystalline and crystalline films of Na, Al, and Pb placed into passive isolators. It is found that a dielectric environment generally leads to a decrease of both the electron work function and the surface energy. It is revealed that the change of the work function is determined only by the average of dielectric constants on both sides of the film. We introduced the position of a conduction band in the dielectric as a parameter in the self-consistency procedure. The calculations with the use of the image potential for an aluminum film with ideal interfaces vacuum/Al(111)/SiO2 and vacuum/Al(111)/Al2O3 and the sandwich SiO2/Al(111)/Al2O3 are performed. As a result, the effective potential profiles and the Schottky barrier heights are calculated.

References

R. Otero, A.L. Vazquez de Parga, and R. Miranda, Phys. Rev. B 66, 115401 (2002).

https://doi.org/10.1103/PhysRevB.66.115401

J.J. Paggel, C.M., Wei, M.Y. Chou, D.-A. Luh, T. Miller, and T.-C. Chiang, Phys. Rev. B 66, 233403 (2002).

https://doi.org/10.1103/PhysRevB.66.233403

D.V. Buturovich, M.V. Kuz'min, M.V. Loginov, and M.A. Mittsev, Phys. Solid State 48, 2205 (2006);

https://doi.org/10.1134/S1063783406110308

Phys. Solid State 50, 173 (2008).

https://doi.org/10.1134/S1063783408010319

Y. Liu, J.J. Paggel, M.H. Upton, T. Miller, and T.-C. Chiang, Phys. Rev. B 78, 235437 (2008).

https://doi.org/10.1103/PhysRevB.78.235437

T.-C. Chiang, AAPPS Bullet. 18, 2 (2008).

A.L. Vazquez de Parga, J.J. Hinarejos, F. Calleja, J. Camarero, R. Otero, and R. Miranda, Surf. Sci. 603, 1389 (2009).

https://doi.org/10.1016/j.susc.2008.08.039

N.A. Vinogradov, D.E. Marchenko, A.M. Shikin, V.K. Adamchuk, and O. Rader, Phys. Sol. State 51, 179 (2009).

https://doi.org/10.1134/S1063783409010235

P.-W. Chen, Y.-H. Lu, T.-R. Chang, C.-B. Wang, L.-Y. Liang, C.-H. Lin, C.-M. Cheng, K.-D. Tsuei, H.-T. Jeng, and S.-J. Tang, Phys. Rev. B 84, 205401 (2011).

https://doi.org/10.1103/PhysRevB.84.205401

E. Ogando, N. Zabala, E.V. Chulkov, and M.J. Puska, Phys. Rev. B 71, 205401 (2005).

https://doi.org/10.1103/PhysRevB.71.205401

J.P. Rogers III, P.H. Cutler, T.E. Feuchtwang, and A.A. Lucas, Surf. Sci. 181, 436 (1987).

https://doi.org/10.1016/0039-6028(87)90199-3

M.V. Moskalets, JETP Lett. 62, 719 (1995).

V.V. Pogosov, V.P. Kurbatsky, and E.V. Vasyutin, Phys. Rev. B 71, 195410 (2005).

https://doi.org/10.1103/PhysRevB.71.195410

Y. Han and D.-J. Liu, Phys. Rev. B 80, 155404 (2009).

https://doi.org/10.1103/PhysRevB.80.155404

V.P. Kurbatsky and V.V. Pogosov, Phys. Rev. B 81, 155404 (2010).

https://doi.org/10.1103/PhysRevB.81.155404

V.D. Dymnikov, Phys. Sol. State 53, 901 (2011).

https://doi.org/10.1134/S106378341105009X

F.K. Schulte, Surf. Sci. 55, 427 (1976).

https://doi.org/10.1016/0039-6028(76)90250-8

N. Zabala, M.J. Puska, and R.M. Nieminen, Phys. Rev. B 59, 12652 (1999).

https://doi.org/10.1103/PhysRevB.59.12652

I. Sarria, C. Henriques, C. Fiolhais, and J.M. Pitarke, Phys. Rev. B 62, 1699 (2000).

https://doi.org/10.1103/PhysRevB.62.1699

A.N. Smogunov, L.I. Kurkina, and O.V. Farberovich, Fiz. Tv. Tela 42, 1898 (2000).

C.M. Horowitz, L.A. Constantin, C.R. Proetto, and J.M. Pitarke, Phys. Rev. B 80, 235101 (2009).

https://doi.org/10.1103/PhysRevB.80.235101

P.J. Feibelman and D.R. Hamann, Phys. Rev. B 29, 6463 (1984).

https://doi.org/10.1103/PhysRevB.29.6463

J.C. Boettger, Phys. Rev. B 53, 13133 (1996).

https://doi.org/10.1103/PhysRevB.53.13133

Z. Zhang, Q. Niu, and C.-K. Shih, Phys. Rev. Lett. 80, 5381 (1998).

https://doi.org/10.1103/PhysRevLett.80.5381

A. Kiejna, J. Peisert, and P. Scharoch, Surf. Sci. 432, 54 (1999).

https://doi.org/10.1016/S0039-6028(99)00510-5

V.V. Pogosov, Sol. St. Commun. 75, 469 (1990).

https://doi.org/10.1016/0038-1098(90)90603-9

A. Kiejna and V.V. Pogosov, J. Phys.: Cond. Matter 8, 4245 (1996).

https://doi.org/10.1088/0953-8984/8/23/016

K. Hirabayashi, Phys. Rev. B 3, 4023 (1971).

https://doi.org/10.1103/PhysRevB.3.4023

M.J. Puska, R.M. Nieminen, and M. Manninen, Phys. Rev. B 31, 3486 (1985).

https://doi.org/10.1103/PhysRevB.31.3486

A. Rubio and L. Serra, Phys. Rev. B 48, 18222 (1993).

https://doi.org/10.1103/PhysRevB.48.18222

J.P. Perdew, H.Q. Tran, and E.D. Smith, Phys. Rev. B 42, 11627 (1990).

https://doi.org/10.1103/PhysRevB.42.11627

J.P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).

https://doi.org/10.1103/PhysRevB.23.5048

A.V. Babich and V.V. Pogosov, Surf. Sci. 603, 2393 (2009).

https://doi.org/10.1016/j.susc.2009.05.036

P.A. Serena, J.M. Soler, and N. Garcia, Phys. Rev. B 34, 6767 (1986).

https://doi.org/10.1103/PhysRevB.34.6767

L.A. Constantin and J.M. Pitarke, Phys. Rev. B 83, 075116 (2011).

https://doi.org/10.1103/PhysRevB.83.075116

A.M. Gabovich, Chem. Phys. Technol. Surf. 1, 72 (2010).

V.V. Pogosov and V.P. Kurbatsky, J. Exp. Theor. Phys. 92, 304 (2001).

https://doi.org/10.1134/1.1354688

P. Stampfli, Phys. Rep. 255, 1 (1995).

https://doi.org/10.1016/0370-1573(94)00089-L

E.H. Rhoderick, Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1978).

L. Lin, H. Li, and J. Robertson, Appl. Phys. Lett. 101, 172907 (2012).

https://doi.org/10.1063/1.4764521

R.H. Fowler and L. Nordheim, Proc. Roy. Soc. A 119, 173 (1928).

https://doi.org/10.1098/rspa.1928.0091

V.S. Fomenko, Emission Properties of Materials (Naukova Dumka, Kiev, 1980) (in Russian).

H.B. Michaelson, J. Appl. Phys. 48, 4729 (1977).

https://doi.org/10.1063/1.323539

J.C. Brewer, R.J. Walters, L.D. Bell, D.B. Farmer, R.G. Gordon, and H.A. Atwater, Appl. Phys. Lett. 85, 4133 (2004).

https://doi.org/10.1063/1.1812831

K. Singh and S.N.A. Hammond, Tur. J. of Phys. 22, 315 (1998).

Moongyu Jang and Junghwan Lee, ETRI J. 24, 461 (2002).

https://doi.org/10.4218/etrij.02.0102.0302

S.G. Louie and M.L. Cohen, Phys. Rev. B 13, 2461 (1976).

https://doi.org/10.1103/PhysRevB.13.2461

G. Bordier and C. Noguera, Phys. Rev. B 44, 6361 (1991).

https://doi.org/10.1103/PhysRevB.44.6361

V.G. Zavodinsky and I.A. Kuyanov, J. Appl. Phys. 81, 2715 (1997).

https://doi.org/10.1063/1.364298

P.W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002).

https://doi.org/10.1063/1.1506388

W. M¨onch, Phys. Rev. Lett. 58, 1260 (1987).

https://doi.org/10.1103/PhysRevLett.58.1260

J. Arponen, P. Hautoj¨arvi, R. Nieminen, and E. Pajanne, J. Phys. F 3, 2092 (1973).

https://doi.org/10.1088/0305-4608/3/12/011

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Published

2018-10-16

How to Cite

Babich, A. V. (2018). On the Work Function and Schottky Barrier Heights of Metal Nanofilms in a Dielectric Environment. Ukrainian Journal of Physics, 59(1), 38. https://doi.org/10.15407/ujpe59.01.0038

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Section

Solid matter