Parameters of Charge Carrier Traps in ZnSe
DOI:
https://doi.org/10.15407/ujpe64.4.300Keywords:
charge carrier traps, recombination centers, localization centers, delocalization centers, zinc selenideAbstract
Taking zinc selenide (ZnSe) crystals as an example, a procedure of determination of the main parameters of traps is proposed. At first, the conductivity type (electron or hole one) in a crystal of phosphor at its excitation is determined with the help of photoelectric studies or studies of the thermionic emission or thermal or photo-thermal emf. Then the energy of the thermal electron delocalization is determined, e.g., by using the method of thermally stimulated luminescence with sequential fractional heating. As a result, the frequency factors of corresponding traps are found as well. Knowing the effective electron mass, it is easy to calculate the effective density of electron states in the conduction band. Finally, the cross sections of the free-electron localization and their temperature dependences can be determined for all traps from a simple equation.
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