Laser-Induced Transformations in Thermally Evaporated Thin TlInSe2 Films Studied by Raman Spectroscopy
DOI:
https://doi.org/10.15407/ujpe68.12.816Keywords:
thin films, thermal evaporation, Raman spectroscopy, crystallisationAbstract
TlInSe2 films with thickness from 10 to 200 nm were thermally evaporated on silicon and silicate glass substrates. Micro-Raman spectra measured at a moderate excitation (532 nm, 4 kW/cm2) confirm the amorphous character of the films. Narrow features revealed in the spectra at an excitation power density of 40 kW/cm2 show the evidence for the formation of TlInSe2 , TlSe, and In2Se3 crystallites in the laser spot. For thin (10–30 nm) films, the rod-shaped TlInSe2 crystallites are shown to be oriented within the film plane. The crystallite formation is governed by the thermal effect of the tightly focused laser beam.
References
D. M¨uller, G. Eulenberger, H.Z. Hahn. Thalliumchalkogenide mit Thalliumselenidstruktur. Anorg. Allg. Chem. B. 398, 207 (1973).
https://doi.org/10.1002/zaac.19733980215
N.M. Gasanly, A.F. Goncharov, B.M. Dzhavadov et al. Vibrational spectra of TlGaTe2, TlInTe2, and TlInSe2 layer single crystals. Phys. Status Solidi B 97, 367 (1980).
https://doi.org/10.1002/pssb.2220970142
N. Mamedov, K. Wakita, A. Ashida et al. Super thermoelectric power of one-dimensional TlInSe2. Thin Solid Films 499, 275 (2006).
https://doi.org/10.1016/j.tsf.2005.07.203
K. Mimura, K. Wakita, M. Arita et al. Angle-resolved photoemission study of quasi one-dimensional TlInSe2. J. Electron Spectrosc. Related Phenom. 156-158, 379 (2007).
https://doi.org/10.1016/j.elspec.2006.11.029
G. Orudzhev, V. Jafarova, S. Schorr et al. Phonon spectra of chain TlSe and TlInSe2: Density functional theory based study. Jpn. J. Appl. Phys. 47, 8193 (2008).
https://doi.org/10.1143/JJAP.47.8193
A.F. Qasrawi, N.M. Gasanly. Transient and steady state photoelectronic analysis in TlInSe2 crystals. Mater. Res. Bull. 46, 1227 (2011).
https://doi.org/10.1016/j.materresbull.2011.04.007
A.F. Qasrawi, N.M. Gasanly. Mixed conduction and anisotropic single oscillator parameters in low dimensional TlInSe2 crystals. Mater. Chem. Phys. 141, 63 (2013).
https://doi.org/10.1016/j.matchemphys.2013.04.025
N. Kalkan, S. Celik, H. Bas, A.E. Ozel. Conduction mechanisms, molecular modelling and micro-Raman studies of TlInSe2 chalcogenide crystal. J. Optoelectron. Adv. Mater. 19, 234 (2017).
S. Hosokawa, J. R. Stellhorn, H. Ikemoto et al. Lattice distortions in TlInSe2 thermoelectric material studied by X-ray absorption fine structure. Phys. Status Solidi B 215, 1700416 (2018).
https://doi.org/10.1002/pssa.201700416
A.M. Panich. Electronic properties and phase transitions in
low-dimensional semiconductors. J. Phys.: Condens. Matter 20, 293202 (2008).
https://doi.org/10.1088/0953-8984/20/29/293202
I. Martynyuk-Lototska, O. Mys, A. Say et al. Anisotropy of acoustic and thermal expansion properties of TlInSe2 crystals. Phase Transit. 92, 23 (2019).
https://doi.org/10.1080/01411594.2018.1545227
N. Mamedov, K. Wakita, S. Akita, Y. Nakayama. 1DTlInSe2: Band structure, dielectric function and nanorods. Jpn. J. Appl. Phys. 44, 709 (2005).
https://doi.org/10.1143/JJAP.44.709
A.F. Qasrawi, F.G. Aljammal, N.M. Taleb, N.M. Gasanly. Design and characterization of TlInSe2 varactor devices. Physica B 406, 2740 (2011).
https://doi.org/10.1016/j.physb.2011.04.018
A.V. Gomonnai, I. Petryshynets, Yu.M. Azhniuk et al. Growth and characterisation of sulphur-rich TlIn(S1−xSex)2 single crystals. J. Crystal Growth. 367, 35 (2013).
https://doi.org/10.1016/j.jcrysgro.2013.01.008
O.O. Gomonnai, M. Ludemann, A.V. Gomonnai et al. Low-temperature Raman studies of sulfur-rich TlIn(S1−xSex)2 single crystals. Vibr. Spectrosc. 97, 114 (2018).
https://doi.org/10.1016/j.vibspec.2018.05.007
S.A. Al-Ghamdi, A.A.A. Darwish, T.A. Hamdalla et al. Structural analysis, dielectric relaxation, and AC electrical conductivity in TlInSe2 thin films as a function of temperature and frequency. Opt. Mater. 129, 112514 (2022).
F.F. Al-Harbi, A.A.A. Darwish, T.A. Hamdalla, K.F. Abd El-Rahman. Structural analysis, dielectric relaxation, and AC electrical conductivity in TlInSe2 thin films as a function of temperature and frequency. Appl. Phys. A 128, 622 (2022).
https://doi.org/10.1007/s00339-022-05759-8
S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov. Frequency-dependent dielectric coefficients of TlInS2 amorphous films. Semicond. Phys., Quantum Electron. Optoelectron. 10, 58 (2007).
https://doi.org/10.15407/spqeo10.02.058
M.M. El-Nahass, H.M. Zeyada, N.A. El-Ghamaz, A. ElGhandour Shetiwy. Particle size reduction of thallium indium disulphide nanostructured thin films due to post annealing. Optik. 171, 580 (2018).
https://doi.org/10.1016/j.ijleo.2018.06.095
B.A. ¨Unl¨u, A. Karatay, M. Y¨uksek et al. The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1−x)S2 (0 ≤ x ≤ 1) chalcogenide thin films. Opt. Laser Technol. 128, 106230 (2020).
https://doi.org/10.1016/j.optlastec.2020.106230
I. Guler, N. Gasanly. Structural and optical properties of thermally annealed thallium indium disulfide thin films. Thin Solid Films 704, 137985 (2020).
https://doi.org/10.1016/j.tsf.2020.137985
B.A. ¨Unl¨u, A. Karatay, E.A. Yildiz et al. Defect assisted nonlinear absorption and optical limiting in amorphous TlGaS2(1−x)Se2(x) (0 ≤ x ≤ 1) chalcogenide thin films. J. Luminesc. 241, 118540 (2022).
https://doi.org/10.1016/j.jlumin.2021.118540
Y.M. Azhniuk, A.V. Gomonnai, D. Solonenko et al. Characterization of Ag-In-S films prepared by thermal evaporation. Mater. Today Proc. 62, Pt. 9, 5745 (2022).
https://doi.org/10.1016/j.matpr.2022.01.488
M. Isik, A. Karatay, N.M. Gasanly. Structural and optical characteristics of thermally evaporated TlGaSe2 thin films. Opt. Mater. 124, 112018 (2022).
https://doi.org/10.1016/j.optmat.2022.112018
Y.M. Azhniuk, A.V. Gomonnai, D. Solonenko et al. Raman and X-ray diffraction study of Ag-In-S polycrystals, films, and nanoparticles. J. Mater. Res. 38, 2239 (2023).
https://doi.org/10.1557/s43578-023-00960-8
I. Guler, M. Isik, N. Gasanly. Structural and optical properties of (TlInS2)0.75(TlInSe2)0.25 thin films deposited by thermal evaporation. J. Mater. Sci.: Mater. Electron. 34, 177 (2023).
https://doi.org/10.1007/s10854-022-09597-5
J. Zirke, G. Frahm, A. Tausend, D. Wobig. Infrared and Raman studies of TlSe. Phys. Status Solidi B 75, K149 (1976).
https://doi.org/10.1002/pssb.2220750254
A.E. Ozel, D. Deger, S. Celik et al. Dielectric and Raman spectroscopy of TlSe thin films. Physica B 527, 72 (2017).
https://doi.org/10.1016/j.physb.2017.10.043
J. Weszka, Ph. Daniel, A. Burian et al. Raman scattering in In2Se3 and InSe2 amorphous films. J. Non-Cryst. Solids 265, 98 (2000).
https://doi.org/10.1016/S0022-3093(99)00710-3
R. Lewandowska, R. Bacewicz, J. Filipowicz, W. Paszkowicz. Raman scattering in α-In2Se3 crystals. Mater. Res. Bull. 36, 2577 (2001).
https://doi.org/10.1016/S0025-5408(01)00746-2
Y.M. Azhniuk, A.V. Gomonnai, V.M. Rubish et al. In situ Raman observation of laser-induced formation of TlInSe2 crystallites in Tl-In-As-Se glass. J. Phys. Chem. Solids 74, 1452 (2013).
https://doi.org/10.1016/j.jpcs.2013.05.005
Y.M. Azhniuk, D. Solonenko, V.Yu. Loya et al. Flexoelectric and local heating effects on CdSe nanocrystals in amorphous As2Se3 films. Mater. Res. Expr. 6, 095913 (2019).
https://doi.org/10.1088/2053-1591/ab3241
Y.M. Azhniuk, V.V. Lopushansky, V.Yu. Loya et al. Raman study of laser-induced formation of II-VI nanocrystals in zinc-doped As-S(Se) films. Appl. Nanosci. 10, 4831 (2020).
Downloads
Published
How to Cite
Issue
Section
License
Copyright Agreement
License to Publish the Paper
Kyiv, Ukraine
The corresponding author and the co-authors (hereon referred to as the Author(s)) of the paper being submitted to the Ukrainian Journal of Physics (hereon referred to as the Paper) from one side and the Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine, represented by its Director (hereon referred to as the Publisher) from the other side have come to the following Agreement:
1. Subject of the Agreement.
The Author(s) grant(s) the Publisher the free non-exclusive right to use the Paper (of scientific, technical, or any other content) according to the terms and conditions defined by this Agreement.
2. The ways of using the Paper.
2.1. The Author(s) grant(s) the Publisher the right to use the Paper as follows.
2.1.1. To publish the Paper in the Ukrainian Journal of Physics (hereon referred to as the Journal) in original language and translated into English (the copy of the Paper approved by the Author(s) and the Publisher and accepted for publication is a constitutive part of this License Agreement).
2.1.2. To edit, adapt, and correct the Paper by approval of the Author(s).
2.1.3. To translate the Paper in the case when the Paper is written in a language different from that adopted in the Journal.
2.2. If the Author(s) has(ve) an intent to use the Paper in any other way, e.g., to publish the translated version of the Paper (except for the case defined by Section 2.1.3 of this Agreement), to post the full Paper or any its part on the web, to publish the Paper in any other editions, to include the Paper or any its part in other collections, anthologies, encyclopaedias, etc., the Author(s) should get a written permission from the Publisher.
3. License territory.
The Author(s) grant(s) the Publisher the right to use the Paper as regulated by sections 2.1.1–2.1.3 of this Agreement on the territory of Ukraine and to distribute the Paper as indispensable part of the Journal on the territory of Ukraine and other countries by means of subscription, sales, and free transfer to a third party.
4. Duration.
4.1. This Agreement is valid starting from the date of signature and acts for the entire period of the existence of the Journal.
5. Loyalty.
5.1. The Author(s) warrant(s) the Publisher that:
– he/she is the true author (co-author) of the Paper;
– copyright on the Paper was not transferred to any other party;
– the Paper has never been published before and will not be published in any other media before it is published by the Publisher (see also section 2.2);
– the Author(s) do(es) not violate any intellectual property right of other parties. If the Paper includes some materials of other parties, except for citations whose length is regulated by the scientific, informational, or critical character of the Paper, the use of such materials is in compliance with the regulations of the international law and the law of Ukraine.
6. Requisites and signatures of the Parties.
Publisher: Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine.
Address: Ukraine, Kyiv, Metrolohichna Str. 14-b.
Author: Electronic signature on behalf and with endorsement of all co-authors.
.png){kind=small}
