Calculation of the Ground-State Ionization Energy for Shallow Donors in n-Ge Single Crystals within the Δ1-Model for the Conduction Band
DOI:
https://doi.org/10.15407/ujpe60.10.1022Keywords:
Ritz variational method, chemical shift, Δ1-minimum, anisotropy factorAbstract
On the basis of the Ritz variational method, the ionization energies for the ground states of Sb, P, and As donors in n-Ge single crystals are calculated in the framework of the Δ1-model for the conduction band and taking the dispersion law anisotropy and the chemical shift into account. A comparison of theoretical results with corresponding experimental data shows that the model of impurity’s Coulomb potential can be used as a rough approximation only for Sb
impurities in Ge, making no allowance for the chemical shift. For the P and As impurities, when the potential field of an impurity ion is not Coulombic, the calculations have to be carried out with regard for a chemical shift.
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