Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals

Authors

  • P. V. Galiy Ivan Franko National University of Lviv, Faculty of Electronics, Department for Semiconductors Physics
  • Ya. B. Losovyj Nanoscale Characterization Facility, Department of Chemistry, Indiana University
  • T. M. Nenchuk Ivan Franko National University of Lviv, Faculty of Electronics, Department for Semiconductors Physics
  • I. R. Yarovets’ Ivan Franko National University of Lviv, Faculty of Electronics, Department for Semiconductors Physics

DOI:

https://doi.org/10.15407/ujpe59.06.0612

Keywords:

low energy electron diffraction, layered crystals, interlayer cleavage surfaces, Debye temperature, Debye–Waller factor, anisotropy of thermal expansion

Abstract

Structure stability and “thermal” parameters of (100) cleavage surfaces of In4Se3 crystals have been studied using the low energy electron diffraction method. The structure of (100) cleavage surfaces of In4Se3 crystals is shown to be stable and not subjected to any reconstruction in a wide temperature interval of 77–295 K. The Debye temperature and the Debye–Waller factor of studied surfaces were calculated on the basis of experimental data obtained for the temperature dependence of the intensities of diffraction spots (the intensities decreased, as the temperature grew). It is confirmed that the Debye temperatures for the cleavage surface (100) and in the bulk of In4Se3 crystal are different. The anisotropy of thermal expansion along the main crystallographic lattice directions in the cleavage plane (100) of In4Se3 is established.

References

K. Oura, V.G. Lifshits, A.A. Saranin, A.V. Zotov, and M. Katayama, Surface Science. An Introduction (Springer, Berlin, 2003).

D.P. Woodruff and T.A. Delchar, Modern Techniques of Surface Science (Cambridge University Press, Cambridge, 1994).

https://doi.org/10.1017/CBO9780511623172

H. Wedler and K. Heinz, Vakuum Forsch. Prax. 2, 107 (1995).

https://doi.org/10.1002/vipr.19950070205

A.R. Shulman and S.A. Fridrikhov, Secondary-Emission Methods for Investigations of Solids (Nauka, Moscow, 1977) (in Russian).

U. Schwarz, H. Hillebrecht, H.J. Deiseroth, and R. Walther, Z. Kristallogr. 210, 342 (1995).

https://doi.org/10.1524/zkri.1995.210.5.342

P.V. Galiy, A.V. Musyanovych, and Ya.M. Fiyala, Physica E 35, 88 (2006).

https://doi.org/10.1016/j.physe.2006.06.003

P.V. Galiy, T.M. Nenchuk, Ya.B. Losovyj, and Ya.M. Fiyala, Funct. Mater. 15, 68 (2008).

P.V. Galiy, T.M. Nenchuk, O.R. Dveriy, A. Ciszewski, P. Mazur, and S. Zuber, Physica E 41, 465 (2009).

https://doi.org/10.1016/j.physe.2008.09.011

W. Jaegermann, A. Klein, and C. Pettenkofer, in Electron Spectroscopies Applied to Low-Dimensional Structures, edited by H.I Hughes and H.P. Starnberg (Kluwer, Dordrecht, 2000), p. 317.

P.V. Galiy, T.M. Nenchuk, O.Ya. Melnyk, and Y.M. Stakhira, Ukr. Fiz. Zh. 48, 256 (2003).

T.D. Henson, D. Sarid, and L.S. Bell, J. Microsc. 152, 467 (1988).

https://doi.org/10.1111/j.1365-2818.1988.tb01409.x

J.M. Nicholls and J.M. Debever, Surf. Sci. 189/190, 919 (1987).

https://doi.org/10.1016/S0039-6028(87)80529-0

J. Brandt, Dissert. zur Erlangung des Dokt. der Mathem.- Nat. (Kiel, 2003).

B.A. Nesterenko and V.G. Lyapin, Phase Transitions on Free Faces and Phase Interfaces in Semiconductors (Naukova Dumka, Kiev, 1990) (in Russian).

Li Ming, P. Thiry, and A. Degiovanni, Phys. Rev. B 49, 11613 (1994).

https://doi.org/10.1103/PhysRevB.49.11613

Bo Ying Han, K. Hevesi, Yu. Li-Ming, J. Vacuum Sci. Technol. A 13, 1036 (1994).

O.A. Balitskii, B. Jaeckel, and W. Jaegermann, Phys. Lett. A 372, 3303 (2008).

https://doi.org/10.1016/j.physleta.2008.01.051

P.V. Galiy, Ya.B. Losovyj, T.M. Nenchuk, and I.R. Yarovets, in Abstracts of the 6th International Workshop on Surface Physics, 1–6 September 2013, Niemcza, Poland (University of Wroclaw, Wroclaw, 2013), p. 51.

E.E. Anders, B.Ya. Sukharevskii, and L.S. Shestachenko, Fiz. Nizk. Temp. 5, 783 (1979).

Ya.B. Losovyj, M. Klinke, E. Cai, I. Rodriges, J. Zhang, L. Makinistian, A.G. Petukhov, E.A. Albanesi, P. Galiy, Ya. Fiyala, J. Liu, and P.A. Dowben, Appl. Phys. Lett. 92, 122107 (2008).

https://doi.org/10.1063/1.2894577

Ya.B. Losovyj, L. Makinistian, E. Albanesi, A.G. Petukhov, J. Liu, P.V. Galiy, O.R. Dveriy, and P.A. Dowben, J. Appl. Phys. 104, 083713 (2008).

https://doi.org/10.1063/1.3000453

I.M. Stakhira and P.G. Ksyondzyk, Ukr. Fiz. Zh. 26, 762 (1981).

B.F. Ormont, Introduction to Physical Chemistry and Crystal Chemistry of Semiconductors (Vysshaya Shkola, Moscow, 1973) (in Russian).

J.W. Niemantsverdriet, Spectroscopy in Catalysis. An Introduction (Wiley, Weinheim, 2007).

https://doi.org/10.1002/9783527611348

C.N. Borca, T. Komesu, H.-k. Jeong, P.A. Dowben, and D. Ristoiu, Appl. Phys. Lett. 77, 88 (2000).

https://doi.org/10.1063/1.126886

K. Fukutani, N. Lozova, S.M. Zuber, P.A. Dowben, P.V. Galiy, and Ya.B. Losovyj, Appl. Surf. Sci. 256, 4796 (2010).

https://doi.org/10.1016/j.apsusc.2010.01.106

D.M. Bercha and K.Z. Rushchanskii, Fiz. Tverd. Tela 40, 2103 (1998).

I.M. Stakhira and P.G. Ksyondzyk, Ukr. Fiz. Zh. 27, 1186 (1982).

P.V. Galiy, T.M. Nenchuk, V.P. Savchin, and Y.M. Stakhira, Ukr. Fiz. Zh. 40, 230 (1995).

P.V. Galiy, T.M. Nenchuk, and J.M. Stakhira, J. Phys. D 34, 18 (2001).

https://doi.org/10.1088/0022-3727/34/1/304

Published

2018-10-23

How to Cite

Galiy, P. V., Losovyj, Y. B., Nenchuk, T. M., & Yarovets’, I. R. (2018). Low-Energy-Electron-Diffraction Structural Studies of (100) Cleavage Surfaces of In4Se3 Layered Crystals. Ukrainian Journal of Physics, 59(6), 612. https://doi.org/10.15407/ujpe59.06.0612

Issue

Section

Solid matter