Optical Properties of Irradiated Epitaxial Gan Films

A. E. Belyaev; N. I. Klyui; R. V. Konakova; A. M. Luk’yanov; Yu. M. Sveshnikov; A. M. Klyui

doi:10.15407/ujpe59.01.0034

Optical Properties of Irradiated Epitaxial Gan Films

Authors

A. E. Belyaev V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
N. I. Klyui V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
R. V. Konakova V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
A. M. Luk’yanov V.E. Lashkaryov Institute of Semiconductor Physics, Nat. Acad. of Sci. of Ukraine
Yu. M. Sveshnikov Close Corporation “Elma-Malakhit”
A. M. Klyui Taras Shevchenko National University of Kyiv

DOI:

https://doi.org/10.15407/ujpe59.01.0034

Keywords:

gallium nitride, epitaxial film, electroreflectance, microwave treatment, broadening parameter, internal strain

Abstract

The influence of a microwave treatment (MWT) on the optical properties of hexagonal GaN films has been studied. To estimate the internal mechanical strains and the degree of structural perfection in a thin near-surface layer of the film, the electroreflectance (ER) method is used. The ER spectra are measured in the interval of the first direct interband transitions. It has been shown that the MWT results in the relaxation of internal mechanical strains in the irradiated films. In addition, the structural perfection in the thin near-surface layer of the irradiated film became higher. A mechanism that includes resonance effects and the local heating of the film defect regions is proposed to explain the effects observed.

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Published

2018-10-16

How to Cite

Belyaev, A. E., Klyui, N. I., Konakova, R. V., Luk’yanov, A. M., Sveshnikov, Y. M., & Klyui, A. M. (2018). Optical Properties of Irradiated Epitaxial Gan Films. Ukrainian Journal of Physics, 59(1), 34. https://doi.org/10.15407/ujpe59.01.0034

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Issue

Vol. 59 No. 1 (2014)

Section

Solid matter

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