Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content
DOI:
https://doi.org/10.15407/ujpe63.01.0033Keywords:
ZnSxSe1−x bulk crystals, direct transitions, indirect transitions, band gapAbstract
ZnSxSe1−x bulk crystals were grown by the Bridgman–Stockbarger method. The transmittance of different samples in the range from 67% to 56% at la = 1100 nm (for 4-mm samples) indicates a high optical quality of the crystals. No new states were revealed at the sulfur incorporation, and the band gap depends on the composition. The optical band gap of ZnSxSe1−x bulk crystals varies from 2.59 to 2.78 eV for direct transitions and from 2.49 to 2.70 eV for indirect transitions.
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