Influence of Domain Structure in Ferroelectric Substrate on Graphene Conductance (Authors' Review)

Authors

  • M. V. Strikha V.Lashkariov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine (pr. Nauky 41, 03028 Kyiv, Ukraine)
  • A. I. Kurchak Taras Shevchenko Kyiv National University, Radiophysical Faculty (pr. Akademika Hlushkova 4g, 03022 Kyiv, Ukraine)
  • A. N. Morozovska Institute of Physics, National Academy of Sciences of Ukraine (46, Prosp. Nauky, Kyiv 03028, Ukraine)

DOI:

https://doi.org/10.15407/ujpe63.01.0049

Keywords:

graphene-on-ferroelectric, domain structure, conductance, field effect transistor

Abstract

Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on graphene-on-ferroelectric, taking into account absorbed dipole layers on the free surface of graphene and localized states on its interfaces is considered. The aspects of the recently developed theory of p-n junctions conductivity in a graphene channel on a ferroelectric substrate, which are created by a 180-degree ferroelectric domain structure, are analyzed, and cases of different current regimes from ballistic to diffusion one are considered. The influence of size effects in such systems and the possibility of using the results for improving the characteristics of field effect transistors with a graphene channel, non-volatile ferroelectric memory cells with random access, sensors, as well as for miniaturization of various devices of functional nanoelectronics are discussed.

References

<ol>
<li>K. Novoselov, A. Geim, S. Morozov, D. Jiang, Y. Zhang, S. Dubonos, I. Grigorieva, A. Firsov, "Electric Field Effect in Atomically Thin Carbon Films", Science, 306, 666 (2004)
</li>
<li>A.Geim. "Graphene: status and prospects." Science, 324, 1530 (2009)
</li>
<li>S. Das Sarma, Shaffique Adam, E.H. Hwang, E.Rossi, "Electronic transport in two-dimensional graphene." Rev. Mod. Phys. 83, 407 (2011)
</li>
<li>B. Amorim, A. Cortijo, F. de Juan, A.G. Grushin, F. Guinea, A. Gutierrez-Rubio, H. Ochoa, V. Parente, R. Roldan, P. San-Jose, J. Schiefele, M. Sturla, and M.A.H. Vozmediano. Novel effects of strains in graphene and other two dimensional materials. Physics Reports, 617, 1-54 (2016).
<a href="https://doi.org/10.1016/j.physrep.2015.12.006">https://doi.org/10.1016/j.physrep.2015.12.006</a>
</li>
<li>Gerardo G.Naumis, Salvador Barraza-Lopez, Maurice Oliva-Leyva, and Humberto Terrones. "A review of the electronic and optical properties of strained graphene and other similar 2D materials." arXiv preprint arXiv:1611.08627 (2016).
</li>
<li>Yi Zheng, Guang-Xin Ni, Chee-Tat Toh, Chin-Yaw Tan, Kui Yao, Barbaros Ozyilmaz. "Graphene field-effect transistors with ferroelectric gating." Phys. Rev. Lett. 105, 166602 (2010).
</li>
<li>Woo Young Kim, Hyeon-Don Kim, Teun-Teun Kim, Hyun-Sung Park, Kanghee Lee, Hyun Joo Choi, Seung Hoon Lee, Jaehyeon Son, Namkyoo Park, and Bumki Min. "Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations." Nature communications 7, Article number: 10429; (2016).
</li>
<li>X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, and J. Zhu. Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3. Appl. Phys. Lett. 97, 033114 (2010)
</li>
<li>A. Rajapitamahuni, J. Hoffman, C. H. Ahn, and X. Hong. Examining Graphene Field Effect Sensors for Ferroelectric Thin Film Studies. Nano Lett., 13, 4374?4379 (2013)
</li>
<li> M. Humed Yusuf, B. Nielsen, M. Dawber, X. Du., "Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface." Nano Lett, 14 (9), 5437 (2014).
</li>
<li> J. H. Hinnefeld, Ruijuan Xu, S. Rogers, Shishir Pandya, Moonsub Shim, L. W. Martin, N. Mason. "Single Gate PN Junctions in Graphene-Ferroelectric Devices." arXiv preprint arXiv:1506.07138 (2015).
</li>
<li> C. Baeumer, D. Saldana-Greco, J. M. P. Martirez, A. M. Rappe, M. Shim, L. W. Martin. "Ferroelectrically driven spatial carrier density modulation in graphene." Nature communications 6, Article number: 6136; (2015)
</li>
<li> Jie, Wenjing, and Jianhua Hao. "Time-dependent transport characteristics of graphene tuned by ferroelectric polarization and interface charge trapping." Nanoscale (2017). Nanoscale, 2018,10, 328-335 10.1039/C7NR06485C
</li>
<li> Anna N. Morozovska, Eugene A. Eliseev, and Maksym V. Strikha. Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall. Applied Physics Letters 108, 232902 (2016)
</li>
<li> Maksym V. Strikha and Anna N. Morozovska. Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current. J. Appl. Phys. 120, 214101 (2016)
</li>
<li> Anatolii I. Kurchak, Anna N. Morozovska, and Maksym V. Strikha. Hysteretic phenomena in GFET: general theory and experiment. Journal of Applied Physics, 122, 044504 (2017).
</li>
<li> Anatolii I. Kurchak, Eugene A. Eliseev, Sergei V. Kalinin, Maksym V. Strikha, and Anna N. Morozovska. P-N junctions dynamics in graphene channel induced by ferroelectric domains motion. Phys. Rev. Applied 8, 024027 (2017)
</li>
<li> Anna N. Morozovska, Anatolii I. Kurchak, and Maksym V. Strikha. Graphene exfoliation at ferroelectric domain wall induced by piezoeffect: impact on the conduction of graphene channel. Phys. Rev. Applied 8, 054004 (2017)
</li>
<li> J.R.Williams, L.DiCarlo, C.M.Marcus, "Quantum Hall effect in a gate-controlled pn junction of graphene." Science, 317, 638 (2007)
</li>
<li> V. Cheianov, V. Falko, "Selective transmission of Dirac electrons and ballistic magnetoresistance of n? p junctions in graphene." Phys.Rev.B, 74, 041403 (2006)
</li>
<li> J.R. Whyte, J.M. Gregg "A diode for ferroelectric domain-wall motion". Nature Communications, 6, Article number: 7361 (2015).
</li>
<li> L.M.Zhang and M.M.Fogler, "Nonlinear screening and ballistic transport in a graphene p ? n junction." Phys. Rev. Lett., 100, 116804 (2008)
</li>
<li> Yu. A. Kruglyak, M. V. Strikha. Generalized Landauer – Datta – Lundstrom Model in Application to Transport Phenomena in Graphene. Ukr. J.Phys. Reviews, 10, 3 (2015)
</li>
<li> C.W.Beenakker, "Andreev reflection and Klein tunneling in graphene." Rev.Mod.Phys. 80, 1337 (2008).
</li>
<li> M. I. Katsnelson, K. S. Novoselov, and A. K. Geim, "Chiral tunnelling and the Klein paradox in graphene". Nat. Phys. 2, 620 (2006).
</li>
<li> V. V. Cheianov, V. I. Falko, and B. L. Altshuler, The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions. Science 315, 1252 (2007).
</li>
<li> A. N. Morozovska, M. V. Strikha. "Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface." J. Appl. Phys. 114, 014101 (2013).
</li>
<li> A. N. Morozovska, E. A. Eliseev, A. V. Ievlev, O. V. Varenyk, A. S. Pusenkova, Ying-Hao Chu, V. Ya. Shur, M. V. Strikha, S. V. Kalinin, "Ferroelectric domain triggers the charge modulation in semiconductors." Journal of Applied Physics, 116, 066817 (2014).
</li>
<li> I. I. Naumov and A. M. Bratkovsky. Gap opening in graphene by simple periodic inhomogeneous strain. Phys. Rev. B, 84, 245444 (2011).
</li>
<li> T L Linnik. Effective Hamiltonian of strained graphene. J. Phys.: Condens. Matter 24, 205302 (2012)
</li>
<li> T. L. Linnik. Photoinduced valley currents in strained graphene. Phys.Rev.B 90, 075406 (2014)
</li>
<li> E.A. Eliseev, A.N. Morozovska, S.V. Kalinin, Y.L. Li, Jie Shen, M.D. Glinchuk, L.Q. Chen, V. Gopalan. "Surface Effect on Domain Wall Width in Ferroelectrics" J. Appl. Phys. 106, 084102 (2009).
</li>
<li> V. Cheianov, V. Falko, "Selective transmission of Dirac electrons and ballistic magnetoresistance of n? p junctions in graphene." Phys.Rev.B, 74, 041403 (2006).
</li>
<li> A. N. Morozovska, A. S. Pusenkova, O.V. Varenyk, S.V. Kalinin, E.A. Eliseev, and M. V. Strikha, Finite size effects of hysteretic dynamics in multi-layer graphene on ferroelectric. Physical Review B 91, 235312 (2015)
</li>
<li> S.Datta. Lessons from Nanoelectronics: A New Perspective on Transport (Hackensack, New Jersey: World Scientific Publishing Company (2015) www.edx.org/school/purduex),
</li>
<li> D. Singh, J.Y. Murthy, and T.S. Fisher, Mechanism of thermal conductivity reduction in few-layer graphene. J. Appl. Phys. 110, 094312 (2011).
</li>
<li> A.K. Tagantsev, L. E. Cross, and J. Fousek. Domains in ferroic crystals and thin films. New York: Springer, 2010. ISBN 978-1-4419-1416-3, e-ISBN 978-1-4419-1417-0.
</li>
<li> Krugliak, Y. O.; Strihka, M.V. Generalized Landauer–Datta–Lundstrom Model in Application to Transport Phenomena in Graphene. Ukr. J. Phys. Reviews 2015, 10, 3-32.
</li>
<li> Strikha, M.V. Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(ZrxTi1–x)O3 ferroelectric substrate. JETP Letters 2012, 95, 198-200.
</li>
<li> Kurchak, A.I.; Strikha, M.V. Antihysteresis of the electrical resistivity of graphene on a ferroelectric Pb(ZrxTi1– x)O3 substrate. JETP 2013,143, 129–135.
</li>
<li> Tagantsev, A.K.; Cross, L. E.; Fousek, J. Domains in ferroic crystals and thin films. Springer: New York, 2010, pp 1-821.
</li>
<li> Кurchak, A. I.; Morozovska, A.N.; Strikha, М.V. Rival mechanisms of hysteresis in the resistivity of graphene channel. Ukr. J. Phys. 2013, 58, 472-479.
</li>
<li> Zheng, Y.; Ni, G.-X.; Toh, C.-T.; Tan, C.-Y.; Yao, K.; Ozyilmaz, B. Graphene field-effect transistors with ferroelectric gating. Phys. Rev. Lett. 2010, 105, 166602.
</li>
<li> Landau, L.D.; Khalatnikov, I. M. On the anomalous absorption of sound near a second order phase transition point. In Dokl. Akad. Nauk SSSR; 1954, pp 469-472.
</li>
<li> Kalinin, S.V.; Morozovska, A.N.; Chen, L. Q.; Rodriguez, B. J. Local polarization dynamics in ferroelectric materials. Rep. Prog. Phys. 2010, 73, 056502-1-67.
</li>
<li> Wang, H.; Wu, Y.; Cong, C.; Shang, J.; Yu, T. Hysteresis of Electronic Transport in Graphene Transistors. ACS Nano 2010, 4, 7221–7228.
</li>
<li> Lafkioti, M.; Krauss, B.; Lohmann, T.; Zschieschang, U.; Klauk, H.; Klitzing, K.; Smet, J. H. Graphene on a hydrophobic substrate: doping reduction and hysteresis suppression under ambient conditions. Nano Lett., 2010, 10, pp 1149–1153.
</li>
<li> Veligura, A.; Zomer, P. J.; Vera-Marun, I. J.; Jozsa, C.; Gordiichuk, P. I.; van Wees, B. J. Relating hysteresis and electrochemistry in graphene field effect transistors. J. Appl. Phys. 2011, 110, 113708.
</li>
<li> Strikha, M. V. Non Volatile Memory of New Generation and Ultrafast IR Modulators Based on Graphene on Ferroelectric Substrate. In Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting; Nazarov, A., Balestra, F., Kilchytska, V., Flandre, D., Eds.; Springer International Publishing: Switzerland, 2014; pp 163–178.
</li>
<li> Strikha, M. V. Hysteresis in the Resistivity of Graphene Channel. In: Chemical Functionalization of Carbon Nanomaterials: Chemistry and Application; Thakur, V. K., Thakur, M. K., Eds.; Taylor and Francis: New York, 2015, pp 939-948.
</li>
<li> Baeumer, C.; Rogers, S. P.; Xu, R.; Martin, L. W.; Shim, M. Tunable carrier type and density in graphene/PbZr0.2Ti0.8O3 hybrid structures through ferroelectric switching. Nano Letters. 2013, 13, 1693–1698.
</li>
<li> A. K. Tagantsev and G. Gerra. Interface-induced phenomena in polarization response of ferroelectric thin films. J. Appl. Phys. 100, 051607 (2006).
</li>
<li> A. K. Tagantsev, M. Landivar, E. Colla, and N. Setter. Identification of passive layer in ferroelectric thin films from their switching parameters. J. Appl. Phys. 78, 2623 (1995).
</li>
<li> G. Rupprecht and R.O. Bell, Dielectric constant in paraelectric perovskite. Phys. Rev. 135, A748 (1964).
</li>
<li> Elton J.G. Santos, "Electric Field Effects on Graphene Materials." In Exotic Properties of Carbon Nanomatter, pp. 383-391. Springer Netherlands, Dordrecht, 2015.
</li>
<li> J. Hlinka and P. Marton, Phenomenological model of a 90° domain wall in BaTiO3-type ferroelectrics. Phys. Rev. B 74, 104104 (2006).
</li>
<li> L. D. Landau, and I. M. Khalatnikov. "On the anomalous absorption of sound near a second order phase transition point." Dokl. Akad. Nauk SSSR, vol. 96, pp. 469-472 (1954).
</li>
<li> R. Kretschmer and K.Binder. "Surface effects on phase transitions in ferroelectrics and dipolar magnets." Phys. Rev. B 20, 1065 (1979).
</li>
<li> Chun-Lin Jia, Valanoor Nagarajan, Jia-Qing He, Lothar Houben, Tong Zhao, Ramamoorthy Ramesh, Knut Urban & Rainer Waser, "Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films." Nature Materials, 6. 64 (2007).
</li>
<li> Anna N. Morozovska, Eugene A. Eliseev, Nicholas V. Morozovsky, and Sergei V. Kalinin. Ferroionic states in ferroelectric thin films. Physical Review B 95, 195413 (2017)
</li>
<li> E.A. Eliseev, A.N. Morozovska. General approach to the description of the size effect in ferroelectric nanosystems. The Journal of Materials Science. 44, № 19, 5149-5160 (2009).
</li>
<li> A.N. Morozovska, E.A. Eliseev, S.V. Svechnikov, A.D. Krutov, V.Y. Shur, A.Y. Borisevich, P. Maksymovych, S.V. Kalinin. Finite size and intrinsic field effect on the polar-active properties of ferroelectric semiconductor heterostructures. Phys. Rev. B. 81, 205308 (2010).
</li>
<li> A.K. Tagantsev, L. E. Cross, and J. Fousek. Domains in ferroic crystals and thin films. New York: Springer, 2010. ISBN 978-1-4419-1416-3, e-ISBN 978-1-4419-1417-0.
</li>
<li> MJ Haun, E Furman, SJ Jang, LE Cross. Thermodynamic theory of the lead zirconate-titanate solid solution system, Part V: Theoretical calculations. Ferroelectrics, 99, 63-86 (1989) (see figure 16 and table I)
<a href="https://doi.org/10.1080/00150198908221440">https://doi.org/10.1080/00150198908221440</a>
</li>
<li> Steven P. Koenig, Narasimha G. Boddeti, Martin L. Dunn, and J. Scott Bunch. "Ultrastrong adhesion of graphene membranes." Nature Nanotechnology 6, 543 (2011)
</li>
<li> Antonio Politano and Gennaro Chiarello. Probing the Young's modulus and Poisson's ratio in graphene/metal interfaces and graphite: a comparative study. NanoResearch, 8(6):1847- 856 (2015).
</li>
<li> Tao Chen and Rebecca Cheung, Mechanical Properties of Graphene. In: Graphene Science Handbook. Mechanical and Chemical Properties. CRC Press. PP. 3-15 (2016)
</li>
<li> F. Felten, G.A. Schneider, J. Mu-oz Salda-a, S.V.Kalinin. Modeling and measurement of surface displacements in BaTiO3 bulk material in piezoresponse force microscopy. J. Appl. Phys.- 2004. - Vol. 96, №1. - P. 563-568.
</li>
<li> S. V. Kalinin, E. A. Eliseev and A. N. Morozovska, Materials contrast in piezoresponse force microscopy Appl. Phys. Lett. 88 (23) (2006).
</li>
<li> A. N. Morozovska, E. A. Eliseev, S. L. Bravina and S. V. Kalinin, Resolution Function Theory in Piezoresponse Force Microscopy: Domain Wall Profile, Spatial Resolution, and Tip Calibration. Physical Review B 75 (17), 174109 (2007).
</li>
<li> S. V. Kalinin, A. N. Morozovska, L. Q. Chen and B. J. Rodriguez, Local polarization dynamics in ferroelectric materials. Reports on Progress in Physics 73 (5), 056502 (2010)
</li>
<li> S.V. Kalinin, B.J. Rodriguez, S.-H. Kim, S.-K. Hong, A. Gruverman, E.A. Eliseev. Imaging Mechanism of Piezoresponse Force Microscopy in Capacitor Structures. Appl. Phys. Lett. 92, 152906 (2008).
</li>
<li> J. Scott Bunch, Arend M. van der Zande, Scott S. Verbridge, Ian W. Frank, David M. Tanenbaum, Jeevak M. Parpia, Harold G. Craighead, Paul L. McEuen, Electromechanical resonators from graphene sheets, Science, 315, 490 (2007).
<a href="https://doi.org/10.1126/science.1136836">https://doi.org/10.1126/science.1136836</a>
</li>
<li> N. Levy, S. A. Burke, K. L. Meaker, M. Panlasigui, A. Zettl, F. Guinea, A. H. Castro Neto, M. F. Crommie, Strain – induced pseudo – magnetic fields greater than 300 tesla in graphene nanobubbles, Science, 329, 544 (2010).
<a href="https://doi.org/10.1126/science.1191700">https://doi.org/10.1126/science.1191700</a></li></ol>

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Published

2018-01-26

How to Cite

Strikha, M. V., Kurchak, A. I., & Morozovska, A. N. (2018). Influence of Domain Structure in Ferroelectric Substrate on Graphene Conductance (Authors’ Review). Ukrainian Journal of Physics, 63(1), 49–69. https://doi.org/10.15407/ujpe63.01.0049

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Semiconductors and dielectrics