Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells

Authors

  • P. J. Baymatov Namangan State University
  • B. T. Abdulazizov Namangan State University

DOI:

https://doi.org/10.15407/ujpe62.01.0046

Keywords:

quantum well, Kane model, subband dispersion, subband filling, two-dimensional electron gas, effective mass, cyclotron mass

Abstract

Results of researches concerning the properties of the two-dimensional (2D) degenerate electron gas in a single quantum well on the basis of the InAs/AlSb heterostructure are reported. The non-parabolic character of the InAs and AlSb conduction bands is described by a simplified Kane model. The dispersion curves for first three subbands are calculated, as well as the dependences of the Fermi energy, subband filling, and effective mass of electrons at the Fermi level on the total 2D electron concentration. The obtained results are in good agreement with experimental data.

References

Yu.B. Vasilyev, F. Gouider, G. Nachtwei, P.D. Buckle. Cyclotron resonance in heterostructures with InSb/AlInSb quantum wells. Fiz. Tekh. Poluprovodn. 44, 1559 (2010) (in Russian).

https://doi.org/10.1134/S1063782610110266

K.E. Spirin, K.P. Kalinin, S.S. Krishtopenko, K.V. Maremyanin, V.I. Gavrilenko, Yu.G. Sadofyev. Peculiarities of persistent photoconductivity in InAs/AlSb double quantum well heterostructures with tunnel transparent separation barrier. Fiz. Tekh. Poluprovodn. 46, 1424 (2012) (in Russian).

D. Barate, R. Teissier, Y. Wang, A.N. Baranov. Short wavelength intersubband emission from InAs/AlSb quantum cascade structures. Appl. Phys. Lett. 87, 051103 (2005).

https://doi.org/10.1063/1.2007854

M.J. Yang, P.J. Lin-Chung, R.J. Wagner, J.R. Waterman, W.J. Moore, B.V. Shanabrook. Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wells. Semicond. Sci. Technol. 8, S129 (1993).

https://doi.org/10.1088/0268-1242/8/1S/029

M.J. Yang, P.J. Lin-Chung, B.V. Shanabrook, J.R. Waterman, R.J. Wagner, W.J. Moore. Enhancement of cyclotron mass in semiconductor quantum wells. Phys. Rev. B 47, 1691 (1993).

https://doi.org/10.1103/PhysRevB.47.1691

C. Gauer, J. Scriba, A. Wixforth, J.P. Kotthaus, C.R. Bolognesi, C. Nguyen, B. Brar, H. Kroemer. Energy-dependent cyclotron mass in InAs/AlSb quantum wells. Semicond. Sci. Technol. 9, 1580 (1994).

https://doi.org/10.1088/0268-1242/9/9/002

R.J. Warburton, C. Gauer, A. Wixforth, J.P. Kotthaus, B. Brar, H. Kroemer. Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field. Phys. Rev. B 53, 7903 (1996).

https://doi.org/10.1103/PhysRevB.53.7903

V.Ya. Aleshkin, V.I. Gavrilenko, A.V. Ikonnikov, Yu.G. Sadofyev, J.P.Bird, S.R. Jonhson, Y.-H. Zhang. A cyclotrone resonance in both doped and non-doped InAs/AlSb heterostructures with quantum wells. Fiz. Tekh. Poluprovodn. 39, 71 (2005) (in Russian).

I.M. Tsydilkovskii. Electrons and Holes in Semiconductors (Nauka, 1972) (in Russian).

B.M. Askerov, Electron Transport Phenomena in Semiconductors (World Scientific, 1994) [ISBN: 978-981-02-1283-4]

https://doi.org/10.1142/1926

Downloads

Published

2018-12-23

Issue

Section

Nanosystems

How to Cite

Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells. (2018). Ukrainian Journal of Physics, 62(1), 46. https://doi.org/10.15407/ujpe62.01.0046

Most read articles by the same author(s)