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Kraitchinskii А, Kras’ko М, Kolosiuk А, Petrunya Р, Povarchuk В, Voitovych В, Neimash В, Makara В, Rudenko Р. Mechanism of Annealing of VO Defects in n-Si Under Pulse Electron Irradiation at High-Temperatures. Ukr. J. Phys. [Internet]. 2022 Feb. 8 [cited 2024 May 5];56(9):922. Available from: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022028