1.
Neimash V, Dovbeshko G, Shepelyavyi P, Danko V, Melnyk V, Isaiev M, Kuzmich A. Raman Scattering in the Process of Tin-Induced Crystallization of Amorphous Silicon. Ukr. J. Phys. [Internet]. 2019 Jan. 8 [cited 2024 Nov. 22];61(2):143. Available from: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019115