SARIKOV, A. Influence of Point Defects on the Equilibrium Concentration of Interstitial Oxygen in Crystalline Silicon. Ukrainian Journal of Physics, [S. l.], v. 56, n. 6, p. 570, 2022. DOI: 10.15407/ujpe56.6.570. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022078. Acesso em: 30 may. 2024.