KOZINETZ, A. V.; LITVINENKO, S. V.; SKRYSHEVSKY, V. A. Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of “Deep” p–n-Junction. Ukrainian Journal of Physics, [S. l.], v. 62, n. 4, p. 318, 2018. DOI: 10.15407/ujpe62.04.0318. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018691. Acesso em: 26 apr. 2024.