TURSUNOV, I. G. Investigations of the Deep-Level Parameters in Semiconductors. Ukrainian Journal of Physics, [S. l.], v. 62, n. 12, p. 1041, 2018. DOI: 10.15407/ujpe62.12.1041. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018241. Acesso em: 28 mar. 2024.