KRAS’KO, M. M.; KOLOSIUK, A. G.; VOITOVYCH, V. V.; POVARCHUK, V. Y.; ROGUTS’KYI, I. S. Influence of Divacancy-Oxygen Defects on Recombination Properties of n-Si Subjected to Irradiation and Subsequent Annealing. Ukrainian Journal of Physics, [S. l.], v. 63, n. 12, p. 1095, 2018. DOI: 10.15407/ujpe63.12.1095. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018178. Acesso em: 26 feb. 2021.