TRUBAIEVA, O. G.; LALAYANTS, A. I.; CHAIKA, M. A. Band Gap Change of Bulk ZnSxSe1–x Semiconductors by Controlling the Sulfur Content. Ukrainian Journal of Physics, [S. l.], v. 63, n. 1, p. 33–37, 2018. DOI: 10.15407/ujpe63.01.0033. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018035. Acesso em: 14 jun. 2024.