RUDENKO, R. M.; KRAS’KO, M. M.; VOITOVYCH, V. V.; KOLOSYUK, A. G.; POVARCHUK, V. Y.; KRAICHYNSKYI, A. M.; YUKHYMCHUCK, V. O.; BRATUS’, V. Y.; VOITOVYCH, M. V.; ZALOILO, I. A. Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin. Ukrainian Journal of Physics, [S. l.], v. 58, n. 12, p. 1165, 2018. DOI: 10.15407/ujpe58.12.1165. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018399. Acesso em: 3 jul. 2024.