Kraitchinskii А.; Kras’ko М.; Kolosiuk А.; Petrunya Р.; Povarchuk В.; Voitovych В.; Neimash В.; Makara В.; Rudenko Р. Mechanism of Annealing of VO Defects in n-Si Under Pulse Electron Irradiation at High-Temperatures. Ukrainian Journal of Physics, [S. l.], v. 56, n. 9, p. 922, 2022. DOI: 10.15407/ujpe56.9.922. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022028. Acesso em: 21 nov. 2024.