GORIN, A.E.; GROMOVA, G.V.; ERMAKOV, V.M.; KOGOUTYUK, P.P.; KOLOMOETS, V.V.; NASARCHUK, P.F.; PANASJUK, L.I.; FEDOSOV, S.A. Silicon p-MOS and n-MOS Transistors with Uniaxially Strained Channels in Electronic Device Nanotechnology. Ukrainian Journal of Physics, [S. l.], v. 56, n. 9, p. 917, 2022. DOI: 10.15407/ujpe56.9.917. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022027. Acesso em: 11 may. 2025.