Gorin А.; Gromova Г.; Ermakov В.; Kogoutyuk П.; Kolomoets В.; Nasarchuk П.; Panasjuk Л.; Fedosov С. Silicon p-MOS and n-MOS Transistors with Uniaxially Strained Channels in Electronic Device Nanotechnology. Ukrainian Journal of Physics, [S. l.], v. 56, n. 9, p. 917, 2022. DOI: 10.15407/ujpe56.9.917. Disponível em: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022027. Acesso em: 22 nov. 2024.