Kras’ko, M. M.; Kolosiuk, A. G.; Voitovych, V. V.; Povarchuk, V. Y.; Roguts’kyi, I. S. Influence of Divacancy-Oxygen Defects on Recombination Properties of N-Si Subjected to Irradiation and Subsequent Annealing. Ukr. J. Phys. 2018, 63, 1095.