Kras’ko, M.M., Kolosiuk, A.G., Voitovych, V.V., Povarchuk, V.Y. and Roguts’kyi, I.S. 2018. Influence of Divacancy-Oxygen Defects on Recombination Properties of n-Si Subjected to Irradiation and Subsequent Annealing. Ukrainian Journal of Physics. 63, 12 (Dec. 2018), 1095. DOI:https://doi.org/10.15407/ujpe63.12.1095.