Kozinetz, A.V., Litvinenko, S.V. and Skryshevsky, V.A. 2018. Physical Properties of Silicon Sensor Structures with Photoelectric Transformation on the Basis of “Deep” p–n-Junction. Ukrainian Journal of Physics. 62, 4 (Dec. 2018), 318. DOI:https://doi.org/10.15407/ujpe62.04.0318.