[1]
Rudenko, R.M., Kras’ko, M.M., Voitovych, V.V., Kolosyuk, A.G., Povarchuk, V.Y., Kraichynskyi, A.M., Yukhymchuck, V.O., Bratus’, V.Y., Voitovych, M.V. and Zaloilo, I.A. 2018. Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin. Ukrainian Journal of Physics. 58, 12 (Oct. 2018), 1165. DOI:https://doi.org/10.15407/ujpe58.12.1165.